公开(公告)号：US20180374718A1

公开(公告)日：2018-12-27

申请号：US15840900

申请日：2017-12-13

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Roman GOUK ,  Guan Huei SEE ,  Yu GU ,  Arvind SUNDARRAJAN ,  Kyuil CHO ,  Colin Costano NEIKIRK ,  Boyi FU

IPC分类号： H01L21/56 ,  H01L23/31

摘要： Embodiments of the present disclosure generally describe methods for minimizing the occurrence and the extent of die shift during the formation of a reconstituted substrate in fan-out wafer level packaging processes. Die shift is a process defect that occurs when a die (device) moves from its intended position within a reconstituted substrate during the formation thereof. Generally, the methods disclosed herein include depositing a device immobilization layer and/or a plurality of device immobilization beads over and/or adjacent to a plurality of singular devices (individual dies), and the carrier substrate they are positioned on, before forming a reconstituted substrate with an epoxy molding compound. The device immobilization layer and/or the plurality of device immobilization beads immobilize the plurality of singular devices and prevents them from shifting on the carrier substrate during the molding process.

公开(公告)号：US20180374696A1

公开(公告)日：2018-12-27

申请号：US15844989

申请日：2017-12-18

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Roman GOUK ,  Guan Huei SEE ,  Yu GU ,  Arvind SUNDARRAJAN

IPC分类号： H01L21/02 ,  H01L23/538 ,  H01L21/027 ,  H01L21/311 ,  G03F7/00 ,  H01L21/48

摘要： Embodiments of the present disclosure generally describe methods of forming one or more device terminal redistribution layers using imprint lithography. The methods disclosed herein enable the formation of high aspect ratio interconnect structures at lower costs than conventional photolithography and etch processes. Further, the processes and methods described herein desirably remove, reduce, and/or substantially eliminate voids in the surrounding polymer layer formed during the polymer deposition process or subsequent thereto.

公开(公告)号：US20190181019A1

公开(公告)日：2019-06-13

申请号：US16276866

申请日：2019-02-15

申请人： Applied Materials, Inc.

发明人： Han-Wen CHEN ,  Steven VERHAVERBEKE ,  Roman GOUK ,  Guan Huei SEE ,  Yu GU ,  Arvind SUNDARRAJAN ,  Kyuil CHO ,  Colin Costano NEIKIRK ,  Boyi FU

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/13 ,  H01L23/00 ,  H01L21/48 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00

摘要： Embodiments of the present disclosure generally describe methods for minimizing the occurrence and the extent of die shift during the formation of a reconstituted substrate in fan-out wafer level packaging processes and reconstituted substrates formed therefrom. Die shift is a process defect that occurs when a die (device) moves from its intended position within a reconstituted substrate during the formation thereof. Generally, the reconstituted substrates disclosed herein include a device immobilization layer and/or a plurality of device immobilization beads over and/or adjacent to a plurality of singular devices (individual dies), and a cured epoxy molding compound formed there over. The device immobilization layer and/or the plurality of device immobilization beads immobilize the plurality of singular devices and prevents them from shifting on the carrier substrate during the molding process.