公开(公告)号：US20230069395A1

公开(公告)日：2023-03-02

申请号：US17460900

申请日：2021-08-30

Applicant: Applied Materials, Inc.

Inventor： Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Meng Cai ,  Sowjanya Musunuru ,  Kaushik Alayavalli ,  Andrew Nguyen

IPC: H01J37/32 ,  H01L21/02 ,  B24B7/22 ,  C23C16/44

Abstract: Exemplary methods of manufacturing a semiconductor cover wafer may include sintering aluminum nitride particles into a substrate characterized by a thickness and characterized by a disc shape. The methods may include grinding a surface of the substrate to reduce the thickness to less than or about 2 mm. The methods may include polishing the surface of the substrate to reduce a roughness. The methods may include annealing the substrate at a temperature of greater than or about 800° C. for a time period of greater than or about 60 minutes.

公开(公告)号：US12142468B2

公开(公告)日：2024-11-12

申请号：US17460900

申请日：2021-08-30

Applicant: Applied Materials, Inc.

Inventor： Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Meng Cai ,  Sowjanya Musunuru ,  Kaushik Alayavalli ,  Andrew Nguyen

IPC: H01J37/32 ,  B24B7/22 ,  C23C16/44

Abstract: Exemplary methods of manufacturing a semiconductor cover wafer may include sintering aluminum nitride particles into a substrate characterized by a thickness and characterized by a disc shape. The methods may include grinding a surface of the substrate to reduce the thickness to less than or about 2 mm. The methods may include polishing the surface of the substrate to reduce a roughness. The methods may include annealing the substrate at a temperature of greater than or about 800° C. for a time period of greater than or about 60 minutes.