公开(公告)号：US20250040191A1

公开(公告)日：2025-01-30

申请号：US18776441

申请日：2024-07-18

Applicant: Applied Materials, Inc.

Inventor： Dejiu Fan ,  Yun-Chu Tsai ,  Sheng-Wen Wang ,  Dong Kil Yim ,  Soo Young Choi

IPC: H01L29/786 ,  C23C14/08 ,  C23C14/58 ,  C23C16/06 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L29/66

Abstract: Embodiments described herein relate to engineering metal oxide layer interfaces to improve electronic device stability. For example, a transistor device can include a base structure and a metal oxide layer disposed on the base structure. The metal oxide layer includes at least one region having a gradient profile with respect to oxygen (O2) composition.