公开(公告)号：US20250066913A1

公开(公告)日：2025-02-27

申请号：US18455508

申请日：2023-08-24

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Diwakar Kedlaya ,  Priya Chouhan

IPC: C23C16/455 ,  C23C16/40 ,  H01J37/32 ,  H01L21/02

Abstract: Methods of filling a feature on a semiconductor substrate may include performing a process to fill the feature on the semiconductor substrate by repeatedly performing first operations. First operations can include providing a silicon-containing precursor. First operations can include contacting the substrate with the silicon-containing precursor to form a silicon-containing material within the feature defined on the substrate. First operations can include purging the semiconductor processing chamber. First operations can include providing an oxygen-and-hydrogen-containing precursor. First operations can include contacting the substrate with the oxygen-and-hydrogen-containing precursor to form a silicon-and-oxygen-containing material within the feature defined on the substrate.