公开(公告)号：US20240203742A1

公开(公告)日：2024-06-20

申请号：US18387732

申请日：2023-11-07

Applicant: Applied Materials, Inc.

Inventor： Nicolas Louis BREIL ,  Wolfgang R. ADERHOLD ,  Shashank SHARMA ,  Nilay Anil PRADHAN

IPC: H01L21/285 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/28562 ,  H01J37/32357 ,  H01L21/02068 ,  H01J37/321 ,  H01J2237/335

Abstract: A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer, and performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.