公开(公告)号：US12283484B2

公开(公告)日：2025-04-22

申请号：US17342644

申请日：2021-06-09

Applicant: Applied Materials, Inc.

Inventor： Nancy Fung ,  Larry Gao

IPC: H01L21/027 ,  C23C14/04 ,  C23C14/06 ,  C23C14/58 ,  C23C16/56 ,  G03F7/11 ,  G03F7/20 ,  G03F7/26 ,  H01L21/033 ,  G03F7/004

Abstract: Embodiments disclosed within include a method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, including selectively depositing passivation material over a top surface of a patterned photoresist layer trimming undesired portions of the passivation material, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.

公开(公告)号：US12249509B2

公开(公告)日：2025-03-11

申请号：US18228234

申请日：2023-07-31

Applicant: Applied Materials, Inc.

Inventor： Larry Gao ,  Nancy Fung

IPC: H01L21/033 ,  G03F7/004 ,  G03F7/20 ,  H01L21/311

Abstract: A method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.

公开(公告)号：US11776811B2

公开(公告)日：2023-10-03

申请号：US17202043

申请日：2021-03-15

Applicant: Applied Materials, Inc.

Inventor： Larry Gao ,  Nancy Fung

IPC: H01L21/033 ,  H01L21/311 ,  G03F7/004 ,  G03F7/20

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  G03F7/0042 ,  G03F7/2004

Abstract: A method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.