公开(公告)号：US20210151949A1

公开(公告)日：2021-05-20

申请号：US16683683

申请日：2019-11-14

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-Hua LI ,  Seshadri RAMASWAMI ,  Kiyoung LEE

IPC: H01S5/022 ,  H01S5/323

Abstract: The disclosure describes techniques for forming an ohmic contact layer in a wafer containing CMOS devices and attaching a VCSEL die therein. A composite layer that forms the ohmic contact layer is selected based on the epitaxially-grown compound semiconductor material of the VCSEL die. The ohmic contact layer may not comprise gold, as gold introduces contamination in the rest of the CMOS process. The wafer may have an allocated area for accepting the VCSEL die. The allocated area may have a recess to facilitate placement of the VCSEL die.