公开(公告)号：US20130102109A1

公开(公告)日：2013-04-25

申请号：US13655170

申请日：2012-10-18

Applicant: Applied Materials, Inc.

Inventor： Michael P. Stewart ,  Hari K. Ponnekanti ,  Prabhat Kumar ,  Jeffrey L. Franklin ,  Kapila P. Wijekoon

IPC: H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/022425 ,  Y02E10/50

Abstract: Embodiments of the present invention generally provide improved processes and apparatus for removing passivation layers from a surface of photovoltaic cells and improving contact resistance in rear point contact photovoltaic cells. In one embodiment, a method of processing a solar cell substrate includes providing a substrate having a passivation layer deposited on a first surface of the substrate. The passivation layer is a layer stack comprising an aluminum oxide and a silicon nitride. The method also includes exposing the first surface of the substrate to an etchant, and heating the etchant to dissolve the aluminum oxide of the passivation layer on the first surface. The method may further include forming a metal containing layer on a second surface of the substrate that is opposite to the first surface.

Abstract translation: 本发明的实施例通常提供用于从光伏电池的表面去除钝化层的改进的工艺和装置，并且改善了后点接触光伏电池中的接触电阻。 在一个实施例中，处理太阳能电池基板的方法包括提供具有沉积在基板的第一表面上的钝化层的基板。 钝化层是包含氧化铝和氮化硅的层叠层。 该方法还包括将衬底的第一表面暴露于蚀刻剂，并加热蚀刻剂以溶解第一表面上钝化层的氧化铝。 该方法还可以包括在与第一表面相对的基板的第二表面上形成含金属层。