公开(公告)号：US20220059359A1

公开(公告)日：2022-02-24

申请号：US17367038

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： Zhi Gang WANG ,  Jiao YANG ,  Alfredo GRANADOS ,  Jon C. FARR ,  Heng WANG ,  Rui Zhe REN

IPC: H01L21/3065 ,  C23C16/52

Abstract: A method of cyclic etching, comprising: (A) depositing, prior to cyclically etching a substrate through a mask opening, a pre-etch protection layer conformally over the mask, sidewalls of the mask defining the mask opening; and an exposed portion of the substrate exposed through the mask opening, the pre-etch protection layer deposited to a first thickness; and (B) cyclically etching the substrate by: (i) depositing a protection layer in the opening of the mask, the protection layer deposited to a second thickness that is less than half of the first thickness; (ii) etching through a portion of the protection layer disposed on the substrate and etching the substrate; and (iii) repeating (i) and (ii) until an end point is reached.

公开(公告)号：US20220399205A1

公开(公告)日：2022-12-15

申请号：US17770019

申请日：2019-12-23

Applicant: Applied Materials, Inc.

Inventor： Zhigang WANG ,  Jiao YANG ,  Heng WANG ,  Alfredo GRANADOS ,  Jon C. FARR ,  Ruizhe REN

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

Abstract: An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer (302) on a substrate (101) in an etch chamber (100) to form an open feature (360) having a bottom surface (312) and sidewalls in the material layer (302); (b) forming a protection layer (314) on the sidewalls and the bottom surface (312) of the open feature (360) from a protection layer (314) gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer (314) formed on the bottom surface (312) of the open feature (360) from a bottom surface (312) open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer (302) from the bottom surface (312) of the open feature (360) until a desired depth of the open feature (360) is reached.