公开(公告)号：US20250118538A1

公开(公告)日：2025-04-10

申请号：US18896265

申请日：2024-09-25

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Mehran MOALEM ,  Farhad MOGHADAM ,  Eller Y. JUCO

IPC: H01J37/32

Abstract: Some embodiments are directed to a remote plasma system. The remote plasma system may include: a first tube; a second tube; a first isolation component coupled between a first end of the first tube and a first end of the second tube; a second isolation component coupled between a second end of the first tube and a second end of the second tube; and a first capacitive element coupled to the first isolation component.

公开(公告)号：US20240152114A1

公开(公告)日：2024-05-09

申请号：US17980378

申请日：2022-11-03

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Jie YU ,  Yang YANG ,  Farhad MOGHADAM

IPC: G05B19/414 ,  G05B19/18

CPC classification number: G05B19/4145 ,  G05B19/182 ,  G05B2219/45031

Abstract: Embodiments provided herein generally include apparatus and methods, controlled by flexible tuning algorithms, for generating a plasma in a plasma processing chamber. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for evaluation and refinement of the tuning algorithms used. This enhances the productivity of batch processing of a plurality of semiconductor wafers during the manufacturing process since the tuning algorithms can be modified on the fly during processing thereof. The tuning algorithms may be recorded, reused and/or modified for controlling future plasma processing.

公开(公告)号：US20240120178A1

公开(公告)日：2024-04-11

申请号：US17963146

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Farhad MOGHADAM ,  Yang YANG

IPC: H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32183 ,  H03H7/40 ,  H01J37/32091 ,  H01J37/321

Abstract: Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and impedance matching equipment used for generating a plasma in a plasma chamber during semiconductor processing therein. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for batch processing of a plurality of semiconductor wafers during the manufacturing process. Operational settings of a master plasma processing system may be used to control the operation of a plurality of slave processing systems. In addition, the operational settings of the master plasma processing system may be recorded and reused for controlling the plurality of slave processing systems.