BANDGAP CIRCUIT WITH LOW POWER CONSUMPTION
    1.
    发明公开

    公开(公告)号:US20240103557A1

    公开(公告)日:2024-03-28

    申请号:US17947465

    申请日:2022-09-19

    Applicant: Apple Inc.

    CPC classification number: G05F3/265

    Abstract: A bandgap circuit that is area efficient and has a low power consumption. The bandgap circuit includes a voltage generator circuit, and a sample and hold circuit coupled to the voltage generator circuit. The voltage generator circuit includes a pair of transistors each connected in a diode configuration and biased with a respective current source of a plurality of current sources of the voltage generator circuit. During a sample phase, the sample and hold circuit samples a first voltage between a first base and a first emitter of a first transistor of the pair of transistors and a second voltage between a second base and a second emitter of a second transistor of the pair of transistors. During a hold phase subsequent to the sample phase, the sample and hold circuit generates an output voltage as a combination of the sampled first and second voltages.

    Bandgap circuit with low power consumption

    公开(公告)号:US12111676B2

    公开(公告)日:2024-10-08

    申请号:US17947465

    申请日:2022-09-19

    Applicant: Apple Inc.

    CPC classification number: G05F3/265

    Abstract: A bandgap circuit that is area efficient and has a low power consumption. The bandgap circuit includes a voltage generator circuit, and a sample and hold circuit coupled to the voltage generator circuit. The voltage generator circuit includes a pair of transistors each connected in a diode configuration and biased with a respective current source of a plurality of current sources of the voltage generator circuit. During a sample phase, the sample and hold circuit samples a first voltage between a first base and a first emitter of a first transistor of the pair of transistors and a second voltage between a second base and a second emitter of a second transistor of the pair of transistors. During a hold phase subsequent to the sample phase, the sample and hold circuit generates an output voltage as a combination of the sampled first and second voltages.

    Pre-charging bootstrapped FET gate

    公开(公告)号:US11777398B2

    公开(公告)日:2023-10-03

    申请号:US17144902

    申请日:2021-01-08

    Applicant: Apple Inc.

    CPC classification number: H02M1/08 H02M3/158 H03K17/6872 H02M1/0006 H03K17/063

    Abstract: Circuitry for bootstrapping and precharging a gate of a field-effect transistor (FET) is disclosed. In one embodiment, an apparatus includes a first transistor coupled to a switching node and further coupled to receive a supply voltage from a supply voltage node, and a second transistor coupled between the switching node and a ground node, wherein the first and second transistors are of a same type. A precharge circuit is configured to precharge a gate terminal of the first transistor to a voltage that is less than a supply voltage on the voltage supply node. The apparatus also includes a bootstrap circuit. Subsequent to precharging the gate terminal of the first transistor, the bootstrap circuit is configured to cause activation of the first transistor by charging the gate terminal to a voltage greater than the supply voltage.

    Pre-charging Bootstrapped FET Gate

    公开(公告)号:US20220224216A1

    公开(公告)日:2022-07-14

    申请号:US17144902

    申请日:2021-01-08

    Applicant: Apple Inc.

    Abstract: Circuitry for bootstrapping and precharging a gate of a field-effect transistor (FET) is disclosed. In one embodiment, an apparatus includes a first transistor coupled to a switching node and further coupled to receive a supply voltage from a supply voltage node, and a second transistor coupled between the switching node and a ground node, wherein the first and second transistors are of a same type. A precharge circuit is configured to precharge a gate terminal of the first transistor to a voltage that is less than a supply voltage on the voltage supply node. The apparatus also includes a bootstrap circuit. Subsequent to precharging the gate terminal of the first transistor, the bootstrap circuit is configured to cause activation of the first transistor by charging the gate terminal to a voltage greater than the supply voltage.

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