公开(公告)号：US20240300808A1

公开(公告)日：2024-09-12

申请号：US18596223

申请日：2024-03-05

Applicant: Analog Devices, Inc.

Inventor： Kemiao Jia ,  Gaurav Vohra ,  Xin Zhang ,  Christine H. Tsau ,  Chen Yang ,  Andrew Proudman ,  Matthew Kent Emsley ,  George M. Molnar, II ,  Nikolay Pokrovskiy ,  Ali Mohammed Shakir ,  Michael Judy

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0111 ,  B81C2201/019

Abstract: Described herein are manufacturing techniques for achieving stress isolation in microelectromechanical systems (MEMS) devices that involve isolation trenches formed from the backside of the substrate. The techniques described herein involve etching a trench in the bottom side of the substrate subsequent to forming a MEMS platform, and processing the MEMS platform to form a MEMS device on the top side of the substrate subsequent to etching the trench.