公开(公告)号：US20020125829A1

公开(公告)日：2002-09-12

申请号：US09800539

申请日：2001-03-07

Applicant: Advanced Technology Materials Inc.

Inventor： Michael C. Vella

IPC: H01J007/24

CPC classification number: H01J37/08 ,  H01J2237/31701

Abstract: An improved double chamber ion source comprising a plasma generating chamber, a charge exchange chamber and a divider structure therebetween. The charge exchange chamber includes magnetic shielding material to reduce exposure of interior components to magnetic field lines externally generated. The double compartment ion source further comprises inclusion of a heat shield and/or a cooling system to overcome deleterious effects caused by increased temperature in the plasma generating chamber. The divider structure has a plurality of apertures having a configuration to reduce surface area on the divider structure in the charge exchange chamber.

Abstract translation: 一种改进的双室离子源，包括等离子体产生室，电荷交换室和它们之间的分隔结构。 电荷交换室包括磁屏蔽材料，以减少内部组件暴露于外部产生的磁场线。 双室离子源还包括加热屏蔽和/或冷却系统，以克服由等离子体产生室中的温度升高引起的有害影响。 分隔结构具有多个孔，其具有减小电荷交换室中的分隔结构上的表面积的构型。

公开(公告)号：US20020130278A1

公开(公告)日：2002-09-19

申请号：US09800643

申请日：2001-03-07

Applicant: Advanced Technology Materials Inc.

Inventor： Michael C. Vella

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3171 ,  H01J37/08

Abstract: A thermoregulation system for an ion implantation system to reduce the temperature in the ion implanter and components therein, or attached thereto, to a temperature at which an ion source material, used in the ion implanter, has a vapor pressure that yields a reduced concentration of vapors. Such arrangement markedly reduces the risk of exposure to harmful vapors from the ion source material.

Abstract translation: 一种用于离子注入系统的温度调节系统，用于将离子注入机及其中或附着于其中的组分的温度降低至离子注入机中使用的离子源材料具有降低浓度的蒸汽压的温度 蒸气 这种布置显着降低了从离子源材料暴露于有害蒸气的风险。