专利检索 ap:("Advanced Semiconductor Engineering, Inc.") AND inv:"Po-Cheng Huang" 第 1 页

1.

发明授权
Heat transfer element, method for forming the same and semiconductor structure comprising the same 有权

公开(公告)号：US12111114B2

公开(公告)日：2024-10-08

申请号：US17163217

申请日：2021-01-29

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Hung-Hsien Huang , Shin-Luh Tarng , Ian Hu , Chien-Neng Liao , Jui-Cheng Yu , Po-Cheng Huang

IPC分类号： F28D15/04 , F28D15/02 , F28F13/18

CPC分类号： F28D15/046 , F28D15/0233 , F28D15/0283 , F28F13/187 , F28F2255/18

摘要： A heat transfer element, a method for manufacturing the same and a semiconductor structure including the same are provided. The heat transfer element includes a housing, a chamber, a dendritic layer and a working fluid. The chamber is defined by the housing. The dendritic layer is disposed on an inner surface of the housing. The working fluid is located within the chamber.