公开(公告)号：US20040157382A1

公开(公告)日：2004-08-12

申请号：US10414282

申请日：2003-04-16

Applicant: AU Optronics Corp.

Inventor： I-Chang Tsao ,  Ming-Wei Sun

IPC: B32B009/00

CPC classification number: H01L21/02686 ,  H01L21/2026 ,  H01L21/2205 ,  H01L27/1248 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/12993 ,  Y10T428/249953 ,  Y10T428/249956 ,  Y10T428/249969 ,  Y10T428/31

Abstract: A diffusion barrier multi-layer structure for a TFT LCD by the LTPS process and the process for fabricating thereof are disclosed. By increasing the coarseness between two layers of the diffusion barrier multi-layer structure with a plasma treatment, or by forming a loose and porous impurity collecting layer between two layers of the diffusion barrier multi-layer structure to trap the impurity atoms, the impurity diffusion can be effectively obstructed.

Abstract translation: 公开了一种通过LTPS工艺制造TFT LCD的扩散阻挡层的多层结构及其制造方法。 通过用等离子体处理来增加扩散阻挡层多层结构的两层之间的粗糙度，或者通过在扩散阻挡层多层结构的两层之间形成松散多孔的杂质收集层来捕获杂质原子，杂质扩散 可以有效阻碍。