Dose Map Optimization for Mask Making
    1.
    发明申请

    公开(公告)号:US20200096876A1

    公开(公告)日:2020-03-26

    申请号:US16141197

    申请日:2018-09-25

    IPC分类号: G03F7/20 G03F1/78

    摘要: A method and a non-transitory computer-readable storage medium for optimizing a dose map for a multi-beam mask writer includes simulating, by a processor, a substrate pattern based on a design pattern and the dose map associated with the design pattern, and updating a value of the dose map based on a comparison between the substrate pattern and the design pattern. An apparatus for optimizing a dose map for a multi-beam mask writer includes a processor and a memory coupled to the processor configured to store instructions to simulate a substrate pattern based on a design pattern and the dose map associated with the design pattern, and update a value of the dose map based on a comparison between the substrate pattern and the design pattern.