公开(公告)号：US20170314915A1

公开(公告)日：2017-11-02

申请号：US15649173

申请日：2017-07-13

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Kaustuve Bhattacharyya ,  Hendrik-Jan Hidde Smilde

IPC: G01B11/27 ,  G03F7/20 ,  G01B11/30 ,  H01L23/544

CPC classification number: G01B11/27 ,  G01B11/30 ,  G03F7/20 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lithographic process is used to form a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprising a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

公开(公告)号：US09714827B2

公开(公告)日：2017-07-25

申请号：US14412771

申请日：2013-06-17

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Kaustuve Bhattacharyya ,  Hendrik-Jan Hidde Smilde

IPC: H01L23/544 ,  G01B11/27 ,  G03F7/20 ,  G01B11/30

CPC classification number: G01B11/27 ,  G01B11/30 ,  G03F7/20 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lithographic process is used to form a plurality of target structures (92, 94) distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprise a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

公开(公告)号：US11466980B2

公开(公告)日：2022-10-11

申请号：US15649173

申请日：2017-07-13

Applicant: ASML Netherlands B.V

Inventor： Maurits Van Der Schaar ,  Kaustuve Bhattacharyya ,  Hendrik-Jan Hidde Smilde

IPC: H01L21/68 ,  G01B11/27 ,  G03F7/20 ,  G01B11/30 ,  H01L23/544

Abstract: A lithographic process is used to form a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprising a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

公开(公告)号：US20150145151A1

公开(公告)日：2015-05-28

申请号：US14412771

申请日：2013-06-17

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Kaustuve Bhattacharyya ,  Hendrik-Jan Hidde Smilde

IPC: G01B11/27 ,  G03F7/20 ,  H01L23/544 ,  G01B11/30

CPC classification number: G01B11/27 ,  G01B11/30 ,  G03F7/20 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lithographic process is used to form a plurality of target structures (92, 94) distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprise a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

Abstract translation: 使用光刻工艺来形成分布在跨越衬底的多个位置处的多个目标结构（92,94），并且具有跨过目标结构分布的多个不同覆盖偏压值的重叠周期结构。 目标结构中的至少一些包括少于所述数量的不同叠加偏置值的多个重叠周期性结构（例如光栅）。 获得目标结构的不对称测量值。 检测到的不对称性用于确定光刻工艺的参数。 可以在校正底部光栅不对称的影响的同时使用包括平移，放大和旋转在内的叠加模型参数，并使用跨衬底的重叠误差的多参数模型。