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公开(公告)号：US20230046682A1
公开(公告)日：2023-02-16
申请号：US17886348
申请日：2022-08-11
Applicant: ASML Netherlands B.V.
Inventor： Fuming WANG , Marco Jan-Jaco WIELAND , Yu CAO , Guohong ZHANG
Abstract: An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.
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