公开(公告)号：US11651509B2

公开(公告)日：2023-05-16

申请号：US17281948

申请日：2019-10-31

申请人： APPLIED MATERIALS ISRAEL LTD.

发明人： Roman Kris ,  Roi Meir ,  Sahar Levin ,  Ishai Schwarzband ,  Grigory Klebanov ,  Shimon Levi ,  Efrat Noifeld ,  Hiroshi Miroku ,  Taku Yoshizawa ,  Kasturi Saha ,  Sharon Duvdevani-Bar ,  Vadim Vereschagin

IPC分类号： G06T7/00 ,  G06T7/13 ,  G06T7/194 ,  G06T7/60 ,  G06V10/44 ,  G06V20/69 ,  G01N23/225

CPC分类号： G06T7/0004 ,  G01N23/225 ,  G06T7/13 ,  G06T7/194 ,  G06T7/60 ,  G06V10/44 ,  G06V20/695 ,  G01N2223/401 ,  G06T2207/10061 ,  G06T2207/30148

摘要： A method for process control of a semiconductor structure fabricated by a series of fabrication steps, the method comprising obtaining an image of the semiconductor structure indicative of at least two individual fabrication steps; wherein the image is generated by scanning the semiconductor structure with a charged particle beam and collecting signals emanating from the semiconductor structure; and processing, by a hardware processor, the image to determining a parameter of the semiconductor structure, wherein processing includes measuring step/s from among the fabrication steps as an individual feature.