公开(公告)号：US20200251340A1

公开(公告)日：2020-08-06

申请号：US16775752

申请日：2020-01-29

Applicant: APPLIED MATERIALS, INC.

Inventor： ROEY SHAVIV ,  AVGERINOS V. GELATOS ,  ISMAIL EMESH ,  XIKUN WANG ,  YU LEI

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: Methods and apparatus for filling a feature disposed in a substrate, including: depositing a first metal within the feature to a first predetermined thickness in a first process chamber; etching the first metal to remove a first portion of the metal at a top of the feature in a second process chamber different than the first process chamber to form an exposed surface of the first metal, and selectively depositing a second metal atop the exposed surface of the first metal within the feature to a second predetermined thickness in a third process chamber; wherein etching the first metal and selectively depositing a second metal are performed without oxygen contacting the top surface.