公开(公告)号：US20210057292A1

公开(公告)日：2021-02-25

申请号：US16545997

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： PRAYUDI LIANTO ,  SHIH-CHAO HUNG ,  GEOK SAN TOH

IPC: H01L21/66 ,  H01L21/56 ,  H01L21/3105 ,  H01L23/00

Abstract: Methods and apparatus for chemical mechanical planarization (CMP) of a polymer or epoxy-based layer. In some embodiments, the method may comprise obtaining an endpoint for polymer or epoxy-based material for use in a CMP process, the CMP process configured to polish polymer or epoxy-based material, monitoring the polymer or epoxy-based layer with an endpoint detection apparatus configured to monitor polymer or epoxy-based material, polishing the polymer or epoxy-based layer with the CMP process, detecting when the polymer or epoxy-based layer has reached the endpoint for the CMP process, and halting the CMP process when the endpoint is detected. The endpoint detection apparatus may further comprise an optical detection apparatus configured to operate at a wavelength of approximately 200 nm to approximately 1700 nm to reduce step height of the polymer or epoxy-based layer.

公开(公告)号：US20210202334A1

公开(公告)日：2021-07-01

申请号：US16731365

申请日：2019-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： PENG SUO ,  PRAYUDI LIANTO ,  GUAN HUEI SEE ,  ARVIND SUNDARRAJAN ,  LIT PING LAM ,  PANGYEN ONG ,  OLIVIA KOENTJORO ,  WEI-SHENG LEI ,  JUNGRAE PARK

IPC: H01L23/31 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00 ,  H01L23/522 ,  H01L23/367

Abstract: A method of forming a semiconductor structure on a wafer includes depositing a polymer layer on the wafer in a wafer-level packaging process, forming at least one wafer-level packaging structure in the polymer layer using a direct writing process that alters a chemical property of portions of the polymer layer that have been directly written to, and removing portions of the polymer layer that have not been written to by the direct writing process revealing the at least one wafer-level packaging structure. In some embodiments, the direct writing process is a two-photon polymerization process that uses a femtosecond laser in combination with a pair of galvanometric laser scanners to solidify portions of the polymer layer to form the wafer-level packaging structure.

公开(公告)号：US20210057238A1

公开(公告)日：2021-02-25

申请号：US16545752

申请日：2019-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： CHIN WEI TAN ,  QI JIE PENG ,  FANG JIE LIM ,  PRAYUDI LIANTO ,  SRISKANTHARAJAH THIRUNAVUKARASU ,  ARVIND SUNDARRAJAN ,  JUN-LIANG SU

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; subsequently constraining the substrate with a clamping force exerted towards the substrate from a top direction by applying a high pressure gas to the substrate and from a bottom direction by applying a vacuum pressure to the substrate; and rapidly cooling the substrate while the substrate is constrained.

公开(公告)号：US20200306931A1

公开(公告)日：2020-10-01

申请号：US16363009

申请日：2019-03-25

Applicant: APPLIED MATERIALS, INC.

Inventor： PRAYUDI LIANTO ,  PENG SUO ,  SHIH-CHAO HUNG ,  PIN GIAN GAN ,  CHUN YU TO ,  PERIYA GOPALAN ,  KOK SEONG TEO ,  LIT PING LAM ,  ANDY LOO ,  PANGYEN ONG ,  DAVID P. SURDOCK ,  KEITH YPMA ,  BRIAN WILLIAMS ,  SCOTT OSTERMAN ,  MARVIN L. BERNT ,  MUHAMMAD NORHAZWAN ,  SAMUEL GOPINATH ,  MUHAMMAD AZIM ,  GUAN HUEI SEE ,  QI JIE PENG ,  SRISKANTHARAJAH THIRUNAVUKARASU ,  ARVIND SUNDARRAJAN

IPC: B24B57/00 ,  H01L21/02 ,  B24B37/34

Abstract: Methods and apparatus for removing particles from a substrate surface after a chemical mechanical polish. In some embodiments, the apparatus may include a manifold configured to receive and atomize a fluid and at least one spray nozzle mounted to the manifold and configured to spray the atomized fluid in a divergent spray pattern such that the substrate surface is cleansed when impinged by spray from the at least one spray nozzle, wherein the at least one spray nozzle sprays the atomized fluid at a pressure of approximately 30 psi to approximately 2500 psi.