公开(公告)号：US20190189399A1

公开(公告)日：2019-06-20

申请号：US16218848

申请日：2018-12-13

Applicant: APPLIED MATERIALS, INC.

Inventor： SATORU KOBAYASHI ,  LANCE SCUDDER ,  DAVID BRITZ ,  SOONAM PARK ,  DMITRY LUBOMIRSKY ,  HIDEO SUGAI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32311 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32229 ,  H01J2237/3341 ,  H01L21/67017

Abstract: Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.