公开(公告)号：US11315773B2

公开(公告)日：2022-04-26

申请号：US16268854

申请日：2019-02-06

申请人： ALPINE QUANTUM TECHNOLOGIES GMBH

发明人： Taehyun Kim ,  Dongil Cho ,  Minjae Lee ,  Seokjun Hong ,  Hongjin Cheon

IPC分类号： H01J49/42 ,  H01J9/14 ,  G06N99/00 ,  H01J49/00 ,  H01J3/40 ,  G06N10/00

摘要： An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.