公开(公告)号：US11508576B2

公开(公告)日：2022-11-22

申请号：US17329394

申请日：2021-05-25

Applicant: Research & Business Foundation Sungkyunkwan University ,  Ajou University Industry-Academic Cooperation Foundation

Inventor： Taesung Kim ,  Jaehyun Lee ,  Hyunho Seok ,  Hyeong U Kim

IPC: H01L21/02 ,  H01L29/267 ,  C01G39/06

Abstract: A method for producing a transition metal dichalcogenide-graphene heterojunction composite, the method includes: transferring a graphene onto a flexile substrate; depositing a transition metal layer on the flexible substrate onto which the graphene has been transferred; and injecting a gas containing plasma-treated sulfur (S) onto the flexile substrate onto which the transition metal layer has been deposited, is disclosed.

公开(公告)号：US11691880B2

公开(公告)日：2023-07-04

申请号：US17388600

申请日：2021-07-29

Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Jaehyun Lee ,  Jiyun Moon

IPC: C01B32/194 ,  C01B32/19 ,  C01G39/06 ,  C30B33/00 ,  C30B29/46 ,  C30B29/64 ,  C30B29/02 ,  B82Y40/00 ,  B82Y30/00

CPC classification number: C01B32/194 ,  C01B32/19 ,  C01G39/06 ,  C30B29/02 ,  C30B29/46 ,  C30B29/64 ,  C30B33/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B2204/02

Abstract: The present embodiments relate to a method for manufacturing a two-dimensional material using a top-down method, the method includes the steps of preparing a bulk crystal, forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer, exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal, transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate, and removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.

公开(公告)号：US12129547B2

公开(公告)日：2024-10-29

申请号：US17232450

申请日：2021-04-16

Applicant: Research & Business Foundation Sungkyunkwan University ,  Ajou University Industry-Academic Cooperation Foundation

Inventor： Taesung Kim ,  Hyunho Seok ,  Jaehyun Lee ,  Hyeong U Kim ,  Kanade Vinit

IPC: C23C16/00 ,  C23C16/06 ,  C23C16/455

CPC classification number: C23C16/45536 ,  C23C16/06

Abstract: The present disclosure relates to a method of producing octahedral transition metal dichalcogenides, including forming a transition metal layer on a substrate and injecting a chalcogenide-containing gas onto the substrate, on which the transition metal layer has been formed, together with a plasma treatment.