-
公开(公告)号:US20230395742A1
公开(公告)日:2023-12-07
申请号:US18032720
申请日:2021-02-02
Inventor: Junseok HEO , Aujin HWANG , Youngseo PARK
IPC: H01L31/109 , H01L31/18
CPC classification number: H01L31/109 , H01L31/18
Abstract: Disclosed is an optical sensor including a three-dimensional (3D) material layer doped with first conductivity type impurities at a first doping concentration, and a two-dimensional material layer doped with second conductivity type impurities at a second doping concentration and arranged in contact with the three-dimensional material layer to form a type II band alignment with the three-dimensional material layer.