公开(公告)号：US20190363029A1

公开(公告)日：2019-11-28

申请号：US16531296

申请日：2019-08-05

申请人： ABB Schweiz AG

发明人： David Guillon ,  Charalampos Papadopoulos ,  Dominik Truessel ,  Fabian Fischer ,  Samuel Hartmann

IPC分类号： H01L23/053 ,  H01L23/24 ,  H01L23/31 ,  H01L23/00 ,  H01L23/492

摘要： The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.

公开(公告)号：US20190393135A1

公开(公告)日：2019-12-26

申请号：US16558906

申请日：2019-09-03

申请人： ABB Schweiz AG

发明人： Samuel Hartmann ,  Dominik Truessel ,  Fabian Fischer

IPC分类号： H01L23/498 ,  H01L23/02 ,  H01R31/06 ,  H01R4/34

摘要： A housing of a power module includes: an encasing for encasing semiconductor elements inside the housing; a power terminal area on the encasing, on which a power terminal plate is provided; an auxiliary terminal area on the encasing at a lower level than the power terminal area; and an interconnecting member with a power terminal connector part and an auxiliary terminal connector part interconnected by a spring part, the spring part is aligned besides the power terminal plate; the interconnecting member is inserted with the power terminal connector part through an opening in the encasing below the power terminal plate, such that the spring part engages the power terminal area besides the power terminal plate and runs to the auxiliary terminal area and the auxiliary terminal connector part is disposed on the auxiliary terminal area.

公开(公告)号：US10854524B2

公开(公告)日：2020-12-01

申请号：US16531296

申请日：2019-08-05

申请人： ABB Schweiz AG

发明人： David Guillon ,  Charalampos Papadopoulos ,  Dominik Truessel ,  Fabian Fischer ,  Samuel Hartmann

IPC分类号： H01L23/053 ,  H01L23/24 ,  H01L23/31 ,  H01L23/492 ,  H01L23/00

摘要： The present application provides a power semiconductor module, including a support which carries at least one power semiconductor device, the support together with the power semiconductor device is at least partly located in a housing, the support and the power semiconductor device are at least partly covered by a sealing material, additionally to the sealing material, a protecting material is provided in the housing, the protecting material is formed from silicon gel and the protecting material at least partly covers at least one of the support, the power semiconductor device and the sealing material.