公开(公告)号：US20250018076A1

公开(公告)日：2025-01-16

申请号：US18712157

申请日：2022-11-10

Applicant: ams-OSRAM Intemational GmbH

Inventor： Alexander WILM ,  Clemens HOFMANN ,  Johannes HOECHTL

IPC: A61L2/24 ,  A61L2/10 ,  A61L2/26 ,  A61L9/20 ,  G01V11/00

Abstract: In at least one embodiment, the method for operating a radiation emitting device, wherein the radiation emitting device is configured to emit radiation into a first part of a room during operation in order to disinfect this first part of the room, comprises a step, in which at least one input signal is provided which is indicative of a change of the irradiation of the room with the radiation from the radiation emitting device. The method further comprises a step in which an output signal for adjusting the operation of the radiation emitting device depending on the input signal is produced.

公开(公告)号：US20240282886A1

公开(公告)日：2024-08-22

申请号：US18571570

申请日：2021-06-18

Applicant: ams-OSRAM Intemational GmbH

Inventor： Heng Wang

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/24 ,  H01L33/30

CPC classification number: H01L33/06 ,  H01L33/0062 ,  H01L33/24 ,  H01L33/305

Abstract: In an embodiment an optoelectronic device includes a semiconductor body with a layer stack including a first n-doped layer, a quantum well structure arranged on the first n-doped layer, and a p-doped layer arranged on the quantum well structure, wherein the quantum well structure extends along a lateral plane within the first region of the layer stack, wherein the quantum well structure extends within the second region on an inclined surface of one of the n-doped layer and p-doped layer with regards to the lateral plane to the sidewall of the layer stack such that a thickness of the quantum well structure within the second region is smaller than a thickness of the quantum well structure within the first region, and wherein a doping concentration of the n-doped layer in the second region is lower that a doping concentration in the first region.

公开(公告)号：US20230231093A1

公开(公告)日：2023-07-20

申请号：US17996422

申请日：2021-06-23

Applicant: ams-OSRAM Intemational GmbH

Inventor： Ivar Tangring

IPC: H01L33/62 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L25/0753

Abstract: In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor layer, a second semiconductor layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a via having a plurality of recesses and a contact layer, wherein the first semiconductor layer has a first electrical contact region, wherein the second semiconductor layer has a second electrical contact region, wherein the via completely penetrates the first semiconductor layer and the active layer and is electrically connected to the second contact region, wherein the first contact region is arranged within the recesses of the via, and wherein the first contact region is divided into a plurality of partial regions, each partial region being arranged in one of the recesses and the partial regions being separated from each other.

公开(公告)号：US20240195143A1

公开(公告)日：2024-06-13

申请号：US18552291

申请日：2022-03-31

Applicant: ams-OSRAM Intemational GmbH

Inventor： Norwin von Malm

IPC: H01S5/0225 ,  G01S7/481 ,  H01S5/042

CPC classification number: H01S5/0225 ,  G01S7/4814 ,  H01S5/04254

Abstract: In an embodiment a light-emitting device includes a housing body, a light-emitting semiconductor component in the housing body, the light-emitting component configured to emit light and an adaptive optical element in and/or on the housing body arranged downstream of the light-emitting semiconductor component in an optical path of the light, wherein the light-emitting device is a semiconductor package.