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1.发明申请公开(公告)号：US20120142193A1
公开(公告)日：2012-06-07
申请号：US13292696
申请日：2011-11-09
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
IPC分类号： H01L21/3105 , C08L61/12 , C08L61/08 , C08G8/04
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或通式（1-2）表示的化合物的缩合得到的聚合物，和 一种或多种由以下通式（2）表示的化合物和/或其等同体。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值的下层膜）的三层抗蚀剂工艺的下层膜组合物，优异的填充性，高 图案抗菌性，特别是在薄于60nm的高纵横线上，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化处理。
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2.发明授权公开(公告)号：US08877422B2
公开(公告)日：2014-11-04
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种 更多种由下列通式（2）表示的化合物和/或其等价物。 可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性， 抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。
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3.发明申请公开(公告)号：US20120171868A1
公开(公告)日：2012-07-05
申请号：US13311137
申请日：2011-12-05
申请人： Tsutomu OGIHARA , Takeru WATANABE , Yusuke BIYAJIMA , Daisuke KORI , Takeshi KINSHO , Toshihiko FUJII
发明人： Tsutomu OGIHARA , Takeru WATANABE , Yusuke BIYAJIMA , Daisuke KORI , Takeshi KINSHO , Toshihiko FUJII
IPC分类号： H01L21/311 , C09D165/02 , C08G61/02
摘要： There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物：一种或多种 由以下通式（2）表示的化合物的种类以及由以下通式（3）表示的化合物和/或其等同体的一种或多种。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。
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4.发明授权公开(公告)号：US08663898B2
公开(公告)日：2014-03-04
申请号：US13311137
申请日：2011-12-05
申请人： Tsutomu Ogihara , Takeru Watanabe , Yusuke Biyajima , Daisuke Kori , Takeshi Kinsho , Toshihiko Fujii
发明人： Tsutomu Ogihara , Takeru Watanabe , Yusuke Biyajima , Daisuke Kori , Takeshi Kinsho , Toshihiko Fujii
摘要： There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物：一种或多种 由以下通式（2）表示的化合物的种类以及由以下通式（3）表示的化合物和/或其等同体的一种或多种。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。
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5.发明授权公开(公告)号：US08592956B2
公开(公告)日：2013-11-26
申请号：US13292696
申请日：2011-11-09
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
IPC分类号： H01L23/58 , H01L21/469
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或通式（1-2）表示的化合物的缩合得到的聚合物，和 一种或多种由以下通式（2）表示的化合物和/或其等同体。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值的下层膜）的三层抗蚀剂工艺的下层膜组合物，优异的填充性，高 图案抗菌性，特别是在薄于60nm的高纵横线上，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化处理。
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6.发明授权公开(公告)号：US08853031B2
公开(公告)日：2014-10-07
申请号：US13313650
申请日：2011-12-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Takeru Watanabe , Toshihiko Fujii , Takeshi Kinsho
IPC分类号： H01L21/336 , C08G10/02 , G03F7/09
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种由以下通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物，以及一种或 更多种由以下通式（2-1）和/或（2-2）表示的化合物和/或其等价物。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。
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7.发明申请公开(公告)号：US20120184103A1
公开(公告)日：2012-07-19
申请号：US13313650
申请日：2011-12-07
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Takeru WATANABE , Toshihiko FUJII , Takeshi KINSHO
IPC分类号： H01L21/3105 , C08L61/12 , C08L61/08 , C08G8/04
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种由以下通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物，以及一种或 更多种由以下通式（2-1）和/或（2-2）表示的化合物和/或其等价物。 可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物， 特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。
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8.发明申请公开(公告)号：US20120108071A1
公开(公告)日：2012-05-03
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Toshihiko FUJII , Takeru WATANABE , Takeshi KINSHO
发明人： Tsutomu OGIHARA , Daisuke KORI , Yusuke BIYAJIMA , Toshihiko FUJII , Takeru WATANABE , Takeshi KINSHO
IPC分类号： H01L21/312 , C09D161/12 , C09D161/08
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种 更多种由下列通式（2）表示的化合物和/或其等价物。 可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性， 抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。
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