公开(公告)号：US08513683B2

公开(公告)日：2013-08-20

申请号：US11344468

申请日：2006-01-31

Applicant: Osamu Maeda ,  Tsuyoshi Fujimoto ,  Motonobu Takeya ,  Toshihiro Hashidu ,  Masaki Shiozaki ,  Yoshio Oofuji

Inventor： Osamu Maeda ,  Tsuyoshi Fujimoto ,  Motonobu Takeya ,  Toshihiro Hashidu ,  Masaki Shiozaki ,  Yoshio Oofuji

IPC: H01L33/00

CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01S5/0206 ,  H01S5/0217 ,  H01S5/026 ,  H01S5/34333 ,  H01S5/4031

Abstract: An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).

Abstract translation: 通过防止漏电流流过衬底的高缺陷区域来提供具有改善的发光效率的光学集成半导体发光器件。 光集成半导体发光器件包括：基板，其中在由具有第一平均位错密度的晶体制成的低缺陷区域中，包括具有高于第一平均位错密度的第二平均位错密度的一个或多个高缺陷区域 ; 和形成在基板上的III-V族氮化物半导体层，具有多个发光器件结构，并且在包括对应于高缺陷区域的区域（高缺陷区域）的区域中具有沟槽。

公开(公告)号：US06995406B2

公开(公告)日：2006-02-07

申请号：US10486050

申请日：2003-06-06

Applicant: Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

Inventor： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

IPC: H01L33/00

CPC classification number: B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

Abstract: In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

Abstract translation: 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：US20060192209A1

公开(公告)日：2006-08-31

申请号：US11344468

申请日：2006-01-31

Applicant: Osamu Maeda ,  Tsuyoshi Fujimoto ,  Motonobu Takeya ,  Toshihiro Hashidu ,  Masaki Shiozaki ,  Yoshio Oofuji

Inventor： Osamu Maeda ,  Tsuyoshi Fujimoto ,  Motonobu Takeya ,  Toshihiro Hashidu ,  Masaki Shiozaki ,  Yoshio Oofuji

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01S5/0206 ,  H01S5/0217 ,  H01S5/026 ,  H01S5/34333 ,  H01S5/4031

Abstract: An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).