公开(公告)号：US20060266291A1

公开(公告)日：2006-11-30

申请号：US10558777

申请日：2004-05-31

申请人： Yizhou Song ,  Takeshi Sakurai ,  Takanori Murata

发明人： Yizhou Song ,  Takeshi Sakurai ,  Takanori Murata

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C14/0036 ,  C23C14/0078 ,  C23C14/083 ,  C23C14/10 ,  C23C14/352 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  C23C14/5853 ,  C23C16/4404 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32477 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/318 ,  H05H1/46

摘要： A thin film deposition apparatus comprising gas introducer for introducing a reactive gas into the vacuum container, and plasma generator for generating a plasma of the reactive gas within the vacuum container. An insulator is deposited on the inner wall surface of the vacuum container. The gas introducer introduces a reactive gas and an inert gas into a region where a plasma is generated by the plasma generator.

摘要翻译： 一种薄膜沉积设备，包括用于将反应性气体引入真空容器的气体导入器，以及用于在真空容器内产生反应气体的等离子体的等离子体发生器。 绝缘体沉积在真空容器的内壁表面上。 气体引入器将反应性气体和惰性气体引入到等离子体发生器产生等离子体的区域中。

公开(公告)号：US20070240637A1

公开(公告)日：2007-10-18

申请号：US11659388

申请日：2005-08-05

申请人： Yizhou Song ,  Tetsuji Arai ,  Koki Chiba ,  Takeshi Sakurai ,  Yousong Jiang

发明人： Yizhou Song ,  Tetsuji Arai ,  Koki Chiba ,  Takeshi Sakurai ,  Yousong Jiang

IPC分类号： H01L21/31 ,  C23C14/34

CPC分类号： C23C14/35 ,  C23C14/34 ,  C23C14/564

摘要： A thin-film forming apparatus is provided capable of forming a thin-film by bringing ions of some degree in plasma into contact with the thin-film. This thin-film forming apparatus comprises a plasma generator disposed at a position corresponding to an opening of a vacuum chamber for producing plasma in the vacuum chamber, a base plate holder for holding a substrate in the vacuum chamber, and an ion quencher disposed between the plasma generator and the base plate holder. When the plasma generator is projected directly onto the base plate holder, the projection image of plasma generator shielded by the ion quencher has an area smaller than the residual image of plasma generator projected onto the base plate holder.

摘要翻译： 提供能够通过使等离子体中的离子与薄膜接触而形成薄膜的薄膜形成装置。 该薄膜形成装置包括：等离子体发生器，其设置在与真空室的真空室的开口相对应的位置，用于在真空室中产生等离子体;基板保持器，用于将基板保持在真空室中;以及离子猝灭器， 等离子发生器和基板支架。 当等离子体发生器直接投影到基板支架上时，由离子猝灭器屏蔽的等离子体发生器的投影图像的面积小于投影到基板支架上的等离子体发生器的残留图像。

公开(公告)号：US20060189046A1

公开(公告)日：2006-08-24

申请号：US10550506

申请日：2004-06-02

申请人： Yizhou Song ,  Takeshi Sakurai

发明人： Yizhou Song ,  Takeshi Sakurai

IPC分类号： H01L21/84 ,  H01L27/148 ,  C23C16/00

CPC分类号： C23C14/5846 ,  C23C14/0078 ,  C23C14/568

摘要： A method of forming a thin film of the present invention comprises: an optical characteristic adjusting step of repeatedly conveying a substrate holder between a zone to perform an intermediate thin film forming step and a zone to perform a film composition converting step while controlling a conveying speed of the substrate holder for holding a substrate, and adjusting a film composition of a finally formed thin film to form the thin film having an optical characteristic value of a region where a hysteresis phenomenon occurs.

摘要翻译： 本发明的薄膜形成方法包括：光学特性调整步骤，在进行中间薄膜形成工序的区域和区域之间反复输送基板保持件，进行膜组成转换工序，同时控制输送速度 用于保持基板，并且调整最终形成的薄膜的膜组成以形成具有发生滞后现象的区域的光学特性值的薄膜。

公开(公告)号：US20060124455A1

公开(公告)日：2006-06-15

申请号：US10559326

申请日：2003-06-02

申请人： Yizhou Song ,  Takeshi Sakurai ,  Takanori Murata

发明人： Yizhou Song ,  Takeshi Sakurai ,  Takanori Murata

IPC分类号： C23C14/00

CPC分类号： C23C14/0036 ,  C23C14/0078 ,  C23C14/083 ,  C23C14/10 ,  C23C14/352 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  C23C14/5853 ,  C23C16/4404 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32477 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/318 ,  H05H1/46

摘要： A thin film deposition apparatus of the present invention includes a vacuum container for maintaining a vacuum therein, gas introducer for introducing a reactive gas into the vacuum container, and plasma generator for generating a plasma of the reactive gas within the vacuum container. A wall surface within the vacuum container is coated with pyrolytic boron nitride. The plasma generator comprises a dielectric wall provided on an outer wall of the vacuum container, the first antenna having a spiral shape, the second antenna having a spiral shape, and the conductor wire for connecting the first and second antennas to an RF power supply, antenna fixing mechanism and position adjustor for antennas.

摘要翻译： 本发明的薄膜沉积装置包括用于在其中保持真空的真空容器，用于将真空容器内的反应性气体导入的气体引导器，以及用于在真空容器内产生反应性气体等离子体的等离子体发生器。 真空容器内的壁表面涂覆有热解氮化硼。 等离子体发生器包括设置在真空容器的外壁上的电介质壁，第一天线具有螺旋形状，第二天线具有螺旋形状，以及用于将第一和第二天线连接到RF电源的导线， 天线固定机构和天线位置调节器。

公开(公告)号：US06287430B1

公开(公告)日：2001-09-11

申请号：US09467377

申请日：1999-12-21

申请人： Shigeharu Matsumoto ,  Kazuo Kikuchi ,  Yizhou Song ,  Takeshi Sakurai ,  Shinichiro Saisho

发明人： Shigeharu Matsumoto ,  Kazuo Kikuchi ,  Yizhou Song ,  Takeshi Sakurai ,  Shinichiro Saisho

IPC分类号： C23C1434

CPC分类号： C23C16/50 ,  C23C14/568 ,  H01J37/34 ,  H01J2237/32

摘要： The present invention is drawn to an apparatus for forming a thin film. The apparatus includes a vacuum chamber; a vacuum apparatus connected to the vacuum chamber; a holder placed in the vacuum chamber, which holder holds a substrate and is rotated by means of a rotating mechanism; a plasma CVD apparatus; and a sputtering apparatus, wherein the plasma CVD apparatus and the sputtering apparatus are placed in a single vacuum chamber and a thin film having an medium refractive index is formed on the substrate held by the holder, by means of the plasma CVD apparatus and the sputtering apparatus. The method making use of such an apparatus is also disclosed.

摘要翻译： 本发明涉及用于形成薄膜的装置。 该装置包括真空室; 连接到真空室的真空设备; 放置在真空室中的保持器，该保持器保持基板并通过旋转机构旋转; 等离子体CVD装置; 以及溅射装置，其中将等离子体CVD装置和溅射装置放置在单个真空室中，并且通过等离子体CVD装置和溅射在由保持器保持的基板上形成具有介质折射率的薄膜 仪器。 还公开了利用这种装置的方法。