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公开(公告)号：US20110258938A1
公开(公告)日：2011-10-27
申请号：US12997455
申请日：2009-06-12
CPC分类号： B24D3/00 , C01F7/02 , C01F7/441 , C01P2004/03 , C01P2004/38 , C01P2004/39 , C01P2004/45 , C01P2004/52 , C01P2004/54 , C01P2004/61 , C01P2004/62 , C09K3/1409 , Y10T428/2982
摘要： Aluminum oxide particles are provided that include primary particles each having a hexahedral shape and an aspect ratio of 1 to 5. The aluminum oxide particles preferably have an average primary particle size of 0.01 to 0.6 μm. The aluminum oxide particles preferably have an alpha conversion rate of 5 to 70%. Further, the aluminum oxide particles preferably have an average secondary particle size of 0.01 to 2 μm, and the value obtained by dividing the 90% particle size of the aluminum oxide particles by the 10% particle size of the aluminum oxide particles is preferably 3 or less. The aluminum oxide particles are used, for example, as abrasive grains in the applications of polishing semiconductor device substrates, hard disk substrates, or display substrates.
摘要翻译： 提供氧化铝颗粒，其包括各自具有六面体形状和长宽比为1至5的一次颗粒。氧化铝颗粒的平均一次粒径优选为0.01至0.6μm。 优选氧化铝粒子的α转化率为5〜70％。 此外，氧化铝粒子的平均二次粒径优选为0.01〜2μm，通过将氧化铝粒子的90％粒径除以氧化铝粒子的10％粒径而得到的值优选为3或 减。 氧化铝粒子例如在研磨半导体器件基板，硬盘基板或显示基板的应用中用作磨粒。
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公开(公告)号：US20060048455A1
公开(公告)日：2006-03-09
申请号：US11222403
申请日：2005-09-08
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463
摘要： A polishing composition includes an abrasive, at least one acid selected from the group consisting of orthophosphoric acid, diphosphoric acid, polyphosphoric acid, metaphosphoric acid, hexametaphosphoric acid, methyl acid phosphate, ethyl acid phosphate, ethyl glycol acid phosphate, isopropyl acid phosphate, phytic acid, and 1-hydroxyethylidene-1,1-diphosphonic acid; at least one salt selected from the group consisting of sodium salts, potassium salts, and lithium salts of an acid selected from orthophosphoric acid, diphosphoric acid, polyphosphoric acid, metaphosphoric acid, hexametaphosphoric acid, methyl acid phosphate, ethyl acid phosphate, ethyl glycol acid phosphate, isopropyl acid phosphate, phytic acid, and 1-hydroxyethylidene-1,1-diphosphonic acid; an oxidizing agent; and water.
摘要翻译： 抛光组合物包括研磨剂，至少一种选自正磷酸，二磷酸，多磷酸，偏磷酸，六偏磷酸，甲基酸式磷酸酯，磷酸乙酯，乙基乙二醇酸性磷酸酯，磷酸异丙酯，肌醇六磷酸 酸和1-羟基亚乙基-1,1-二膦酸; 选自正磷酸，二磷酸，多磷酸，偏磷酸，六偏磷酸，甲基酸式磷酸酯，磷酸乙酯，乙基乙二醇酸的酸的钠盐，钾盐和锂盐中的至少一种盐 磷酸盐，磷酸异丙酯，植酸和1-羟基亚乙基-1,1-二膦酸; 氧化剂; 和水。
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公开(公告)号：US20080003928A1
公开(公告)日：2008-01-03
申请号：US11855665
申请日：2007-09-14
申请人： Yasushi Matsunami , Junichi Hirano , Jie Lin
发明人： Yasushi Matsunami , Junichi Hirano , Jie Lin
IPC分类号： B24B7/00
CPC分类号： C09K3/1409 , C09K3/1463
摘要： A polishing composition contains abrasive grain such as colloidal silica, acid such as citric acid and orthophosphoric acid, an oxidizing agent such as hydrogen peroxide, a compound selected from a group consisting of azoles and its derivatives such as benzotriazole. The polishing composition is suitably used for polishing a magnetic disk substrate.
摘要翻译： 抛光组合物含有磨粒如胶态二氧化硅，酸如柠檬酸和正磷酸，氧化剂如过氧化氢，选自唑类及其衍生物如苯并三唑的化合物。 抛光组合物适合用于研磨磁盘基片。
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公开(公告)号：US20070068902A1
公开(公告)日：2007-03-29
申请号：US11238256
申请日：2005-09-29
申请人： Yasushi Matsunami , Junichi Hirano , Jie Lin
发明人： Yasushi Matsunami , Junichi Hirano , Jie Lin
CPC分类号： C09K3/1409 , C09K3/1463
摘要： A polishing composition contains abrasive grain such as colloidal silica, acid such as citric acid and orthophosphoric acid, an oxidizing agent such as hydrogen peroxide, a compound selected from a group consisting of azoles and its derivatives such as benzotriazole. The polishing composition is suitably used for polishing a magnetic disk substrate.
摘要翻译： 抛光组合物含有磨粒如胶态二氧化硅，酸如柠檬酸和正磷酸，氧化剂如过氧化氢，选自唑类及其衍生物如苯并三唑的化合物。 抛光组合物适合用于研磨磁盘基片。
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