公开(公告)号：US20100213163A1

公开(公告)日：2010-08-26

申请号：US12389688

申请日：2009-02-20

Applicant: Hisayoshi Watanabe ,  Toshiomi Yokoyama ,  Nobuyuki Mori ,  Akihiro Kaneko ,  Michitaka Nishiyama ,  Kenji Yokoyama

Inventor： Hisayoshi Watanabe ,  Toshiomi Yokoyama ,  Nobuyuki Mori ,  Akihiro Kaneko ,  Michitaka Nishiyama ,  Kenji Yokoyama

IPC: B44C1/22

CPC classification number: G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49032

Abstract: The present invention relates to a shaping method of a thin film layer and a manufacturing method of a perpendicular recording magnetic head using the same. In the thin film layer shaping method according to the present invention, since a second thin film of a lower etching rate is etched by a preliminary etching amount allowing for a difference between the etching rate of the second thin film and an etching rate of a first thin film in side-by-side relationship with each other, both the first and second thin films can be etched by the same etching amount through a subsequent etching step, so that the thin film layer can be shaped into a given shape. Thus, the surface of the thin film layer can be planarized.

Abstract translation: 本发明涉及薄膜层的成形方法和使用该薄膜层的垂直记录磁头的制造方法。 在根据本发明的薄膜层成形方法中，由于通过初步蚀刻量蚀刻蚀刻速率较低的第二薄膜，从而允许第二薄膜的蚀刻速率与第一薄膜的蚀刻速率之间的差异 薄膜彼此并排关系，通过后续的蚀刻步骤可以通过相同的蚀刻量来蚀刻第一和第二薄膜，使得薄膜层可以成形为给定的形状。 因此，可以平坦化薄膜层的表面。

公开(公告)号：US08080167B2

公开(公告)日：2011-12-20

申请号：US12389688

申请日：2009-02-20

Applicant: Hisayoshi Watanabe ,  Toshiomi Yokoyama ,  Nobuyuki Mori ,  Akihiro Kaneko ,  Michitaka Nishiyama ,  Kenji Yokoyama

Inventor： Hisayoshi Watanabe ,  Toshiomi Yokoyama ,  Nobuyuki Mori ,  Akihiro Kaneko ,  Michitaka Nishiyama ,  Kenji Yokoyama

IPC: B44C1/22

CPC classification number: G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49032

Abstract: The present invention relates to a shaping method of a thin film layer and a manufacturing method of a perpendicular recording magnetic head using the same. In the thin film layer shaping method according to the present invention, since a second thin film of a lower etching rate is etched by a preliminary etching amount allowing for a difference between the etching rate of the second thin film and an etching rate of a first thin film in side-by-side relationship with each other, both the first and second thin films can be etched by the same etching amount through a subsequent etching step, so that the thin film layer can be shaped into a given shape. Thus, the surface of the thin film layer can be planarized.

Abstract translation: 本发明涉及薄膜层的成形方法和使用该薄膜层的垂直记录磁头的制造方法。 在根据本发明的薄膜层成形方法中，由于通过初步蚀刻量蚀刻蚀刻速率较低的第二薄膜，从而允许第二薄膜的蚀刻速率与第一薄膜的蚀刻速率之间的差异 薄膜彼此并排关系，通过后续的蚀刻步骤可以通过相同的蚀刻量来蚀刻第一和第二薄膜，使得薄膜层可以成形为给定的形状。 因此，可以平坦化薄膜层的表面。