公开(公告)号：US20100218791A1

公开(公告)日：2010-09-02

申请号：US12680799

申请日：2008-09-22

申请人： Hiroshi Tanaka ,  Toshiyuki Shiokawa ,  Takao Inada

发明人： Hiroshi Tanaka ,  Toshiyuki Shiokawa ,  Takao Inada

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  H01L21/67028

摘要： A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.

摘要翻译： 在将晶片浸入清洗槽中的清洗液体的状态下，将干燥气体从大致水平方向或垂直向下方向向大致水平方向，倾斜向下方向供给到干燥室。 将晶片从清洁槽移动到干燥室中，其中干燥气体被供应到干燥室中。 此时，在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下，将干燥气体供给到干燥室内停止。 在将晶片移动到干燥室中之后，干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。

公开(公告)号：US08951359B2

公开(公告)日：2015-02-10

申请号：US13106972

申请日：2011-05-13

申请人： Takao Inada ,  Naoyuki Okamura ,  Hidetsugu Yano ,  Yosuke Hachiya

发明人： Takao Inada ,  Naoyuki Okamura ,  Hidetsugu Yano ,  Yosuke Hachiya

IPC分类号： B08B7/00 ,  B08B7/04 ,  B08B3/00 ,  H01L21/67

CPC分类号： H01L21/67028 ,  H01L21/67017 ,  H01L21/67051 ,  Y10S134/902

摘要： There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

摘要翻译： 提供了一种液体处理方法，其通过使用处理溶液在基板的前表面上进行液体处理，然后通过使用温度低于基板的温度的冲洗溶液在基板的前表面上进行冲洗处理 处理方案。 液体处理方法包括在液体处理和漂洗过程之间进行中间处理，用于将衬底的前表面的温度调节到高于冲洗溶液的温度并低于处理溶液的温度的温度。

公开(公告)号：US20110277793A1

公开(公告)日：2011-11-17

申请号：US13106972

申请日：2011-05-13

申请人： Takao Inada ,  Naoyuki Okamura ,  Hidetsugu Yano ,  Yosuke Hachiya

发明人： Takao Inada ,  Naoyuki Okamura ,  Hidetsugu Yano ,  Yosuke Hachiya

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67028 ,  H01L21/67017 ,  H01L21/67051 ,  Y10S134/902

摘要： There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

摘要翻译： 提供了一种液体处理方法，其通过使用处理溶液在基板的前表面上进行液体处理，然后通过使用温度低于基板的温度的冲洗溶液在基板的前表面上进行冲洗处理 处理方案。 液体处理方法包括在液体处理和漂洗过程之间进行中间处理，用于将衬底的前表面的温度调节到高于冲洗溶液的温度并低于处理溶液的温度的温度。

公开(公告)号：US09070549B2

公开(公告)日：2015-06-30

申请号：US12680799

申请日：2008-09-22

申请人： Hiroshi Tanaka ,  Toshiyuki Shiokawa ,  Takao Inada

发明人： Hiroshi Tanaka ,  Toshiyuki Shiokawa ,  Takao Inada

IPC分类号： B08B5/02 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02052 ,  H01L21/67028

摘要： A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.

摘要翻译： 在将晶片浸入清洗槽中的清洗液体的状态下，将干燥气体从大致水平方向或垂直向下方向向大致水平方向，倾斜向下方向供给到干燥室。 将晶片从清洁槽移动到干燥室中，其中干燥气体被供应到干燥室中。 此时，在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下，将干燥气体供给到干燥室内停止。 在将晶片移动到干燥室中之后，干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。