公开(公告)号：US06610457B2

公开(公告)日：2003-08-26

申请号：US09975967

申请日：2001-10-15

申请人： Jun Young Kim ,  Sung Hyun Ha ,  Kwang Duk Ahn ,  Jong Hee Kang

发明人： Jun Young Kim ,  Sung Hyun Ha ,  Kwang Duk Ahn ,  Jong Hee Kang

IPC分类号： G03C176

CPC分类号： C08F220/30 ,  G03F7/091

摘要： A bottom antireflective coating layer is made from the compositions of organic photosensitive materials that contain isoflavone chromophore by photolithography utilizing a deep ultraviolet light source for producing a submicro-level, large-scale integrated chip. A copolymer containing an isoflavone chromophore is used as a bottom antireflective coating layer for fabricating a 64-megabit or gigabit DRAM. The antireflective coating layer enables not only the suppression of reflections of light that occur under the substrate layer but also the removal of standing waves. Consequently, a high-resolution sub-micron of a 100˜200 nm integrated circuit is able to be stably formed. Therefore, it is possible to increase the production of semiconductors.

摘要翻译： 底部抗反射涂层由含有异黄酮发色团的有机感光材料的组合物由利用深紫外光源的光刻法制成亚微米级大型集成芯片制成。 含有异黄酮发色团的共聚物被用作用于制造64兆位或千兆位DRAM的底部抗反射涂层。 抗反射涂层不仅能够抑制在基底层下发生的光的反射，而且能够消除驻波。 因此，可以稳定地形成100〜200nm集成电路的高分辨率亚微米。 因此，可以增加半导体的生产。