公开(公告)号：US6025281A

公开(公告)日：2000-02-15

申请号：US993603

申请日：1997-12-18

Applicant: Matthias Passlack ,  Jonathan K. Abrokwah ,  Sandeep Pendharkar ,  Stephen B. Clemens ,  Jimmy Z. Yu ,  Brian Bowers

Inventor： Matthias Passlack ,  Jonathan K. Abrokwah ,  Sandeep Pendharkar ,  Stephen B. Clemens ,  Jimmy Z. Yu ,  Brian Bowers

IPC: H01L21/28 ,  H01L21/30 ,  H01L21/3105 ,  H01L21/316

CPC classification number: H01L21/28264 ,  H01L21/3006 ,  H01L21/3105

Abstract: A method of passivating interface states of oxide-compound semiconductor interfaces using molecular, atomic, or isotopic species wherein said species are applied before oxide deposition in ultra-high vacuum, or during interruption of oxide deposition in ultra-high vacuum (preferentially after oxide surface coverage of a submonolayer, a monolayer, or a few monolayers), or during oxide deposition in ultra-high vacuum, or after completion of oxide deposition, or before or after any processing steps of the as deposited interface structure. In a preferred embodiment, hydrogen or deuterium atoms are applied to a Ga.sub.2 O.sub.3 --GaAs interface at some point before, during, or after oxide deposition in ultra-high vacuum, or before or after any processing steps of the as deposited interface structure, at any given and useful substrate temperature wherein the atomic species can be provided by any one of RF discharge, microwave plasma discharge, or thermal dissociation.

Abstract translation: 使用分子，原子或同位素物质钝化氧化物 - 化合物半导体界面的界面状态的方法，其中所述物质在超高真空中的氧化物沉积之前或在超高真空（优选氧化物表面之后） 亚单层，单层或几个单层的覆盖），或者在超高真空中的氧化物沉积期间，或在氧化物沉积完成之后，或在作为沉积的界面结构的任何处理步骤之前或之后。 在一个优选的实施方案中，在超高真空中的氧化物沉积之前，期间或之后的某个时刻，或者在作为沉积的界面结构的任何处理步骤之前或之后，在任何时候，在任何时候，将氢或氘原子施加到Ga 2 O 3 -GaAs- 给定和有用的衬底温度，其中可以通过RF放电，微波等离子体放电或热解离中的任何一种来提供原子种类。