公开(公告)号：US08765505B2

公开(公告)日：2014-07-01

申请号：US13581399

申请日：2011-03-15

申请人： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

发明人： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/32

摘要： The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.

摘要翻译： 多发光元件及其制造方法技术领域本发明涉及多发光元件及其制造方法。 本发明提供了一种多发光元件，包括：设置在基板上的缓冲层; 设置在缓冲层上的第一类型半导体层; 第一有源层，其设置在所述第一类型半导体层上并被图案化以暴露所述第一类型半导体层的一部分; 设置在由所述第一有源层曝光的所述第一类型半导体层上的第二有源层; 以及设置在第一有源层和第二有源层上的第二类型半导体层，第一和第二有源层在水平方向上重复设置，以及其制造方法。

公开(公告)号：US08759815B2

公开(公告)日：2014-06-24

申请号：US13818572

申请日：2011-09-01

申请人： Seong Ran Jeon ,  Young Ho Song ,  Jae Bum Kim ,  Young Woo Kim ,  Woo Young Cheon ,  Jin Hong Kim

发明人： Seong Ran Jeon ,  Young Ho Song ,  Jae Bum Kim ,  Young Woo Kim ,  Woo Young Cheon ,  Jin Hong Kim

IPC分类号： H01L33/04

CPC分类号： H01L33/12 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

摘要： The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

摘要翻译： 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件，这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层，形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段，应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外，应变控制层的能带隙小于有源层的量子势垒的能带隙。

公开(公告)号：US20130299775A1

公开(公告)日：2013-11-14

申请号：US13818572

申请日：2011-09-01

申请人： Seong Ran Jeon ,  Young Ho Song ,  Jae Bum Kim ,  Young Woo Kim ,  Woo Young Cheon ,  Jin Hong Kim

发明人： Seong Ran Jeon ,  Young Ho Song ,  Jae Bum Kim ,  Young Woo Kim ,  Woo Young Cheon ,  Jin Hong Kim

IPC分类号： H01L33/12 ,  H01L33/04

CPC分类号： H01L33/12 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

摘要： The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

摘要翻译： 本发明涉及通过增加电子和有助于发光的空穴的复合速率而提高发光效率的氮化物基半导体发光器件，这是通过匹配电子和空穴波函数的空间分布而得到的。 根据本发明的氮化物基半导体发光器件包括n型氮化物层，形成在n型氮化物层上的有源层和形成在有源层上的p型氮化物层。 在这个阶段，应变控制层和至少一个层在有源层中具有比量子阱层更大的能带隙。 应变控制层设置在形成有源层的量子阱层的区域中。 此外，应变控制层的能带隙小于有源层的量子势垒的能带隙。

公开(公告)号：US20120319081A1

公开(公告)日：2012-12-20

申请号：US13581399

申请日：2011-03-15

申请人： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

发明人： Seong Ran Jeon ,  Jae Bum Kim ,  Seung Jae Lee

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L33/08 ,  H01L33/06 ,  H01L33/32

摘要： The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same.

摘要翻译： 多发光元件及其制造方法技术领域本发明涉及多发光元件及其制造方法。 本发明提供了一种多发光元件，包括：设置在基板上的缓冲层; 设置在缓冲层上的第一类型半导体层; 第一有源层，其设置在所述第一类型半导体层上并被图案化以暴露所述第一类型半导体层的一部分; 设置在由所述第一有源层曝光的所述第一类型半导体层上的第二有源层; 以及设置在第一有源层和第二有源层上的第二类型半导体层，第一和第二有源层在水平方向上重复设置，及其制造方法。