SINTERED RARE-EARTH MAGNET AND METHOD OF MANUFACTURE

    公开(公告)号:US20240355513A1

    公开(公告)日:2024-10-24

    申请号:US18615143

    申请日:2024-03-25

    IPC分类号: H01F1/053 H01F41/02

    CPC分类号: H01F1/0536 H01F41/0266

    摘要: A sintered rare-earth magnet contains specific amounts of R (two or more rare-earth elements, with Nd and Pr being essential), boron (B), M1 (one or more element selected from Al, Si, Cr, Mn, Cu, Zn, Ga, Ge, Mo, Sn, W, Pb and Bi) and M2 (one or more element selected from Ti, V, Zr, Nb, Hf and Ta), with the balance being T (one or more element selected from Fe and Co). The magnet has a R2Ti4B main phase and, over an area fraction of more than 0% and up to 10%, an R2(T, M1)17 phase covered with an R6(T, M1)14 phase and an R-rich phase. Two magnetization inflection points—a first knickpoint on a low magnetic field side and a second knickpoint on a high magnetic field side—are present in the second quadrant of the magnetic polarization curve at 23° C.

    Method For Forming Resist Underlayer Film And Patterning Process

    公开(公告)号:US20240345483A1

    公开(公告)日:2024-10-17

    申请号:US18601583

    申请日:2024-03-11

    IPC分类号: G03F7/11 G03F7/075 G03F7/09

    CPC分类号: G03F7/11 G03F7/0752 G03F7/094

    摘要: The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

    MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS

    公开(公告)号:US20240345480A1

    公开(公告)日:2024-10-17

    申请号:US18625950

    申请日:2024-04-03

    IPC分类号: G03F7/029 G03F7/32

    CPC分类号: G03F7/029 G03F7/325

    摘要: The negative-tone molecular resist composition comprises an onium salt containing a cation having a cyclic ether site and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR when processed by photolithography using high-energy radiation. The molecular resist composition of the invention meets both high sensitivity and high resolution and is improved in LWR when processed by photolithography using high-energy radiation, especially EB or EUV lithography. The resist composition is quite useful for precise micropatterning.

    NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD FOR PRODUCING THE SAME

    公开(公告)号:US20240339603A1

    公开(公告)日:2024-10-10

    申请号:US18745287

    申请日:2024-06-17

    IPC分类号: H01M4/485 H01M4/02

    摘要: The present invention is a negative electrode active material containing negative electrode active material particles. The negative electrode active material particles include silicon compound particles each containing an oxygen-containing silicon compound. The silicon compound particle contains at least one of Li2SiO3 and Li2Si2O5. The silicon compound particle has, in a Si K-edge spectrum obtained from a XANES spectrum: a peak P derived from the Li silicate and located near 1847 eV; and a peak Q gentler than the peak P and located near 1851 to 1852 eV. This provides a negative electrode active material that is capable of stabilizing a slurry when the negative electrode active material is used for a secondary battery, and capable of increasing the battery capacity by improving the initial efficiency.