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    Alkali barrier superconductor Josephson junction and circuit
    1.
    发明授权
    Alkali barrier superconductor Josephson junction and circuit 失效
    碱屏障超导体约瑟夫逊结和电路

    公开(公告)号：US5250817A

    公开(公告)日：1993-10-05

    申请号：US928984

    申请日：1992-08-12

    申请人： Richard L. Fink

    发明人： Richard L. Fink

    IPC分类号： H01L39/22 ,  B05D5/12 ,  H01B12/00

    CPC分类号： H01L39/225 ,  Y10S505/702

    摘要： A superconducting Josephson junction, circuit and method of manufacture is provided for maintaining optimal chemical and structural compositions at the interface region between an insulating barrier (12) and a pair of superconductor electrodes (14) and (16). Each superconductor electrode of the Josephson junction comprises a chemical selected from the group consisting of Ba1-xKxBiO3 and Ba1-xRbxBiO3. In addition, the insulating barrier (12), formed between the electrode pair (14) and (16), is made of a chemical compound including an alkali element. The alkali element within the barrier region serves to eliminate or reduce ion migration from the BKBO or BRBO superconducting electrodes. The alkali element in the barrier (12) as well as the superconductor electrodes (14) and (16) also provides good structural matching at the barrier-electrode interface regions. As a result of the chemical and structural matching between the superconductor electrodes and the barrier, an SIS Josephson tunnel junction and integrated circuit is formed having high quality histeretic properties.

    摘要翻译： 提供超导约瑟夫逊结，电路和制造方法，用于在绝缘屏障（12）和一对超导体电极（14）和（16）之间的界面区域保持最佳化学和结构组成。 约瑟夫逊结的每个超导体电极包含选自Ba1-xKxBiO3和Ba1-xRbxBiO3的化学物质。 此外，形成在电极对（14）和（16）之间的绝缘屏障（12）由包含碱元素的化合物制成。 阻挡区域内的碱元素用于消除或减少从BKBO或BRBO超导电极的离子迁移。 势垒（12）中的碱元素以及超导体电极（14）和（16）也在阻挡 - 电极界面区域提供了良好的结构匹配。 由于超导体电极和屏障之间的化学和结构匹配的结果，形成了具有高质量组成特性的SIS约瑟夫逊隧道结和集成电路。

    Large area electron source
    3.
    发明授权
    Large area electron source 失效

    公开(公告)号：US07078716B2

    公开(公告)日：2006-07-18

    申请号：US10765533

    申请日：2004-01-27

    申请人： Richard L Fink ,  Leif H. Thuesen

    发明人： Richard L Fink ,  Leif H. Thuesen

    IPC分类号： H01J33/00

    CPC分类号： H01J33/00 ,  H01J2201/304

    摘要： By using a large area cathode, an electron source can be made that can irradiate a large area more uniformly and more efficiently than currently available devices. The electron emitter can be a carbon film cold cathode, a microtip or some other emitter. It can be patterned. The cathode can be assembled with electrodes for scanning the electron source.