公开(公告)号：US07271077B2

公开(公告)日：2007-09-18

申请号：US10734999

申请日：2003-12-12

Applicant: Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

Inventor： Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC: H01L21/36 ,  H01L21/20

CPC classification number: C30B25/14 ,  C23C16/45527 ,  C30B25/02

Abstract: An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precursor gas flowing comprises a plurality of first precursor gas pulses. The plurality of first precursor gas pulses comprises at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber. After forming the first monolayer on the substrate, a second precursor gas different in composition from the first is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

Abstract translation: 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 第一前体气体流动包括多个第一前体气体脉冲。 多个第一前体气体脉冲包括当没有气体被供给到腔室时在两个紧邻的第一前体气体脉冲之间的至少一个总时间段。 在衬底上形成第一单层之后，组成不同于第一衬底的第二前体气体流入沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。

公开(公告)号：US06673701B1

公开(公告)日：2004-01-06

申请号：US10229887

申请日：2002-08-27

Applicant: Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

Inventor： Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC: C30B2502

CPC classification number: C30B25/14 ,  C23C16/45527 ,  C30B25/02

Abstract: An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precursor gas flowing comprises a plurality of first precursor gas pulses. The plurality of first precursor gas pulses comprises at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber. After forming the first monolayer on the substrate, a second precursor gas different in composition from the first is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

Abstract translation: 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 第一前体气体流动包括多个第一前体气体脉冲。 多个第一前体气体脉冲包括当没有气体被供给到腔室时在两个紧邻的第一前体气体脉冲之间的至少一个总时间段。 在衬底上形成第一单层之后，组成不同于第一衬底的第二前体气体流入沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。