公开(公告)号：US07272885B2

公开(公告)日：2007-09-25

申请号：US10690829

申请日：2003-10-23

Applicant: Mehrdad Hassanzadeh ,  Frédéric Malpiece ,  Dominique Mercier

Inventor： Mehrdad Hassanzadeh ,  Frédéric Malpiece ,  Dominique Mercier

IPC: H01C7/02 ,  H01C7/04

CPC classification number: H01C7/18 ,  H01C7/12 ,  Y10T29/49002 ,  Y10T29/49085 ,  Y10T29/49087 ,  Y10T29/49096 ,  Y10T29/49098 ,  Y10T29/49099

Abstract: The present invention relates to a method of manufacturing surge arrestors, the method including stacking varistors; and forming a coating of composite material on the stack. Between these steps, also included is placing a bead of flexible, adhesive, and dielectric material on the previously formed stack in register with the various interfaces between each pair of adjacent varistors.

Abstract translation: 本发明涉及一种制造电涌放电器的方法，该方法包括堆叠变阻器; 并在叠层上形成复合材料的涂层。 在这些步骤之间，还包括将柔性，粘合和介电材料的珠子放置在先前形成的堆叠上，与每对相邻变阻器之间的各种界面对准。

公开(公告)号：US20070140891A1

公开(公告)日：2007-06-21

申请号：US11541562

申请日：2006-10-03

Applicant: Mehrdad Hassanzadeh ,  Celine Machado-Bailly ,  Renaud Metz ,  Ramon Puyane

Inventor： Mehrdad Hassanzadeh ,  Celine Machado-Bailly ,  Renaud Metz ,  Ramon Puyane

IPC: C22C1/05

CPC classification number: C04B35/457 ,  C01B13/322 ,  C04B35/6265 ,  C04B35/62665 ,  C04B35/6268 ,  C04B35/628 ,  C04B35/62805 ,  C04B35/653 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3267 ,  C04B2235/3277 ,  C04B2235/40 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/5436 ,  C04B2235/77 ,  C04B2235/96 ,  H01C7/108 ,  H01C17/06533

Abstract: Process for the preparation of a semiconducting ceramic based on doped tin oxide SnO2 by a process of “PADO” (Precursor Alloy Direct Oxidation) type applied to an alloy of tin and of doping metals or by a process of “PADO” type applied to tin, the doping metals being added in the form of oxides to the powder subjected to sintering.

Abstract translation: 通过“PADO”（前体合金直接氧化）方法制备基于掺杂的氧化锡SnO 2的半导体陶瓷的方法，该方法应用于锡和掺杂金属的合金或通过工艺 的“PADO”型，将掺杂金属以氧化物的形式加入到经过烧结的粉末中。