公开(公告)号：US09099503B2

公开(公告)日：2015-08-04

申请号：US12253480

申请日：2008-10-17

申请人： Manabu Iwata

发明人： Manabu Iwata

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H03H7/38 ,  H01J37/32 ,  H03H7/40

CPC分类号： H01L21/67069 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H03H7/38 ,  H03H7/40

摘要： In a plasma etching apparatus, a first high frequency for plasma generation and a second high frequency for ion attraction are respectively applied from two high frequency supplies to a susceptor. Further, DC voltage is applied from a variable DC power supply to an upper electrode via a filter circuit. An annular DC ground part attached to an upper side surface of the susceptor is connected to a filter circuit. This filter circuit allows a specific frequency component of the intermodulation distortion generated in a plasma by a series resonant to selectively flow to a ground line.

摘要翻译： 在等离子体蚀刻装置中，分别从两个高频电源向基座施加等离子体产生用的第一高频和离子吸引用的第二高频。 此外，通过滤波电路将直流电压从可变直流电源施加到上电极。 附接到基座的上侧表面的环形DC接地部分连接到滤波器电路。 该滤波器电路允许通过串联谐振产生在等离子体中的互调失真的特定频率分量选择性地流向接地线。

公开(公告)号：US08999068B2

公开(公告)日：2015-04-07

申请号：US12873458

申请日：2010-09-01

申请人： Masanobu Honda ,  Hidetoshi Hanaoka ,  Taichi Hirano ,  Takanori Mimura ,  Manabu Iwata ,  Taketoshi Okajo

发明人： Masanobu Honda ,  Hidetoshi Hanaoka ,  Taichi Hirano ,  Takanori Mimura ,  Manabu Iwata ,  Taketoshi Okajo

IPC分类号： C23C16/44 ,  H01J37/32

CPC分类号： C23C16/4405 ,  H01J37/32862

摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.

摘要翻译： 提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。 在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。

公开(公告)号：US08377255B2

公开(公告)日：2013-02-19

申请号：US12686630

申请日：2010-01-13

申请人： Manabu Iwata

发明人： Manabu Iwata

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/32091 ,  H01J37/32577 ,  H01J37/32642

摘要： A plasma processing apparatus performing a plasma processing to a substrate includes a processing vessel having a vacuum exhaustible processing chamber; a mounting table serving as a lower electrode for mounting thereon the substrate in the processing chamber; a circular ring member arranged to surround a periphery of the substrate whose radial one end portion is supported by the mounting table; an upper electrode arranged above the lower electrode to face same; and a power feed for supplying the mounting table with a high frequency power. The plasma processing apparatus further includes a first intermediate electrical conductor supporting a middle portion of the circular ring member; and a first movable electrical conductor which is selectively electrically connected or disconnected to the power feed; and a second intermediate electrical conductor supporting a radial opposite end portion of the circular ring member.

摘要翻译： 对基板进行等离子体处理的等离子体处理装置包括具有真空可消耗处理室的处理容器; 用作下电极的安装台，用于将基板安装在处理室中; 环形构件，被布置成围绕所述基板的周边，其径向一端部由所述安装台支撑; 上电极，其布置在所述下电极的上方以面对其; 以及用于向安装台提供高频功率的供电。 等离子体处理装置还包括支撑圆环构件的中间部分的第一中间电导体; 以及第一可移动电导体，其被选择性地电连接或断开到所述电力馈送; 以及支撑所述圆环构件的径向相对端部的第二中间电导体。

公开(公告)号：US08317969B2

公开(公告)日：2012-11-27

申请号：US12410809

申请日：2009-03-25

申请人： Manabu Iwata

发明人： Manabu Iwata

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32568 ,  H01J37/32091

摘要： A plasma processing apparatus includes a processing chamber; a lower center electrode mounting thereon a target substrate; a lower peripheral electrode; an upper electrode disposed above the lower center electrode; a gas supplying unit supplying a processing gas into the processing chamber; a first RF power supply outputting a first RF power for generating a plasma of the processing gas; a second RF power supply for outputting a second RF power for introducing ions into the substrate; and a central feed conductor connected to a rear surface of the lower center electrode. The apparatus further includes a circumferential feed conductor connected to a rear surface of the lower peripheral electrode to bypass and supply some of the first RF power to the lower peripheral electrode; and a movable feed conductor electrically connecting the central feed conductor and the circumferential feed conductor for the first RF power by capacitance coupling.

摘要翻译： 等离子体处理装置包括处理室; 安装在其上的下部中心电极; 下周围电极; 设置在所述下中心电极上方的上电极; 气体供给单元，将处理气体供给到所述处理室内; 输出用于产生处理气体的等离子体的第一RF功率的第一RF电源; 第二RF电源，用于输出用于将离子引入到衬底中的第二RF功率; 以及连接到下中心电极的后表面的中心馈电导体。 所述装置还包括连接到所述下周边电极的后表面的周向馈电导体，以旁路并将一些第一RF功率提供给所述下周边电极; 以及可移动馈电导体，通过电容耦合将第一RF功率的中心馈电导体和周向馈电导体电连接。

公开(公告)号：US20120145324A1

公开(公告)日：2012-06-14

申请号：US13396181

申请日：2012-02-14

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC分类号： H01L21/3065

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20100176086A1

公开(公告)日：2010-07-15

申请号：US12686630

申请日：2010-01-13

申请人： Manabu IWATA

发明人： Manabu IWATA

IPC分类号： H01L21/3065

CPC分类号： H01J37/32623 ,  H01J37/32091 ,  H01J37/32577 ,  H01J37/32642

摘要： A plasma processing apparatus performing a plasma processing to a substrate includes a processing vessel having a vacuum exhaustible processing chamber; a mounting table serving as a lower electrode for mounting thereon the substrate in the processing chamber; a circular ring member arranged to surround a periphery of the substrate whose radial one end portion is supported by the mounting table; an upper electrode arranged above the lower electrode to face same; and a power feed for supplying the mounting table with a high frequency power. The plasma processing apparatus further includes a first intermediate electrical conductor supporting a middle portion of the circular ring member; and a first movable electrical conductor which is selectively electrically connected or disconnected to the power feed; and a second intermediate electrical conductor supporting a radial opposite end portion of the circular ring member.

摘要翻译： 对基板进行等离子体处理的等离子体处理装置包括具有真空可消耗处理室的处理容器; 用作下电极的安装台，用于将基板安装在处理室中; 环形构件，被布置成围绕所述基板的周边，其径向一端部由所述安装台支撑; 上电极，其布置在所述下电极的上方以面对其; 以及用于向安装台提供高频功率的供电。 等离子体处理装置还包括支撑圆环构件的中间部分的第一中间电导体; 以及第一可移动电导体，其被选择性地电连接或断开到所述电力馈送; 以及支撑所述圆环构件的径向相对端部的第二中间电导体。

公开(公告)号：US20100000970A1

公开(公告)日：2010-01-07

申请号：US12498703

申请日：2009-07-07

申请人： Chishio Koshimizu ,  Manabu Iwata ,  Tatsuo Matsudo

发明人： Chishio Koshimizu ,  Manabu Iwata ,  Tatsuo Matsudo

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32642 ,  H01J37/32522 ,  H01J37/32623

摘要： In a method of controlling the temperature of an in-chamber member used in a plasma processing apparatus that processes a target substrate with plasma, a plurality of power-feeding portions is provided in the in-chamber member and the in-chamber member is heated by supplying electric power thereto through the power-feeding portions. A resistance value or resistivity of the in-chamber member is measured and the electric power is controlled based on the temperature of the in-chamber member estimated from the resistance value or resistivity. The in-chamber member includes one or more annular members arranged around the target substrate. The in-chamber member is a member making contact with plasma within a chamber and existing near the target substrate.

摘要翻译： 在等离子体处理对象基板的等离子体处理装置中使用的室内部件的温度控制方法中，在室内部件中设置有多个供电部，加热室内部件 通过供电部向其供电。 测量室内构件的电阻值或电阻率，并且基于根据电阻值或电阻率估计的室内构件的温度来控制电功率。 腔内构件包括围绕靶基底布置的一个或多个环形构件。 腔内构件是与腔室内的等离子体接触并存在于靶基底附近的构件。

公开(公告)号：US20090242134A1

公开(公告)日：2009-10-01

申请号：US12410809

申请日：2009-03-25

申请人： Manabu Iwata

发明人： Manabu Iwata

IPC分类号： C23F1/00 ,  C23C16/00 ,  C23C14/34 ,  B01J19/08

CPC分类号： H01J37/32568 ,  H01J37/32091

摘要： A plasma processing apparatus includes a processing chamber; a lower center electrode mounting thereon a target substrate; a lower peripheral electrode; an upper electrode disposed above the lower center electrode; a gas supplying unit supplying a processing gas into the processing chamber; a first RF power supply outputting a first RF power for generating a plasma of the processing gas; a second RF power supply for outputting a second RF power for introducing ions into the substrate; and a central feed conductor connected to a rear surface of the lower center electrode. The apparatus further includes a circumferential feed conductor connected to a rear surface of the lower peripheral electrode to bypass and supply some of the first RF power to the lower peripheral electrode; and a movable feed conductor electrically connecting the central feed conductor and the circumferential feed conductor for the first RF power by capacitance coupling.

摘要翻译： 等离子体处理装置包括处理室; 安装在其上的下部中心电极; 下周围电极; 设置在所述下中心电极上方的上电极; 气体供给单元，将处理气体供给到所述处理室内; 输出用于产生处理气体的等离子体的第一RF功率的第一RF电源; 第二RF电源，用于输出用于将离子引入到衬底中的第二RF功率; 以及连接到下中心电极的后表面的中心馈电导体。 所述装置还包括连接到所述下周边电极的后表面的周向馈电导体，以旁路并将一些第一RF功率提供给所述下周边电极; 以及可移动馈电导体，通过电容耦合将第一RF功率的中心馈电导体和周向馈电导体电连接。

公开(公告)号：US20090242133A1

公开(公告)日：2009-10-01

申请号：US12407109

申请日：2009-03-19

申请人： Hiroyuki Nakayama ,  Masanobu Honda ,  Kenji Masuzawa ,  Manabu Iwata

发明人： Hiroyuki Nakayama ,  Masanobu Honda ,  Kenji Masuzawa ,  Manabu Iwata

IPC分类号： C23F1/08

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32541

摘要： An electrode structure capable of adequately increasing an electron density in a processing space at a part facing a circumferential edge portion of a substrate. In a processing chamber of a substrate processing apparatus that performs RIE processing on a wafer, an upper electrode of the electrode structure is disposed to face the wafer placed on a susceptor inside the processing chamber. The upper electrode includes an inner electrode facing a central portion of the wafer and an outer electrode facing the circumferential edge portion of the wafer. The inner and outer electrodes are connected with first and second DC power sources, respectively. The outer electrode has its first secondary electron emission surface extending parallel to the wafer and its second secondary electron emission surface obliquely extending relative to the first secondary electron emission surface.

摘要翻译： 一种电极结构，其能够在面向基板的周缘部的部分处适当地增加处理空间中的电子密度。 在对晶片进行RIE处理的基板处理装置的处理室中，设置电极结构体的上部电极，使其位于处理室内的基座上。 上电极包括面对晶片的中心部分的内电极和面对晶片周缘部分的外电极。 内电极和外电极分别与第一和第二直流电源连接。 外部电极具有平行于晶片延伸的第一二次电子发射表面及其相对于第一二次电子发射表面倾斜延伸的第二二次电子发射表面。

公开(公告)号：US20090223933A1

公开(公告)日：2009-09-10

申请号：US12465436

申请日：2009-05-13

申请人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

发明人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

IPC分类号： B44C1/22

CPC分类号： H01J37/32091 ,  H01J37/32183

摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.

摘要翻译： 用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极 ，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗 在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。