公开(公告)号：US08879319B1

公开(公告)日：2014-11-04

申请号：US13562136

申请日：2012-07-30

Applicant: Yuval Cassuto ,  Luoming Zhang ,  M. Amin Shokrollahi

Inventor： Yuval Cassuto ,  Luoming Zhang ,  M. Amin Shokrollahi

IPC: G11C16/04 ,  G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/105 ,  G11C17/146 ,  G11C2211/5641 ,  G11C2211/5646

Abstract: A multi-level cell flash memory storage device has cells wherein different charge levels represent different information. The storage device can read stored charge from one or more cells, store a rewrite generation value for a group of a plurality of cells in a block of cells, and write to cells, wherein writing to one or more cells without an erase includes an increment of the rewrite generation value, and includes circuitry for reading from cells, including circuitry for reading the rewrite generation value. The storage device can include circuitry for reading from cells includes within the multi-level cell flash memory storage device logic for calculating a stored value of the cells using the rewrite generation value and relative levels of charge on a plurality of cells. The storage device can track hot addresses and cold addresses and perform static or dynamic wear leveling based on accumulated rewrite generation values.

Abstract translation: 多级单元闪存存储设备具有其中不同电荷电平表示不同信息的单元。 存储设备可以从一个或多个单元读取存储的电荷，将一组多个单元的重写生成值存储在单元块中，并写入单元，其中写入一个或多个单元而不擦除包括增量 并且包括用于从单元读取的电路，包括用于读取重写生成值的电路。 存储设备可以包括用于从小区读取的电路包括在多级单元闪存存储设备逻辑中，用于使用重写生成值和多个单元上的电荷的相对电平来计算单元的存储值。 存储设备可以跟踪热地址和冷地址，并基于累积的重写生成值执行静态或动态损耗均衡。