公开(公告)号：US20060172554A1

公开(公告)日：2006-08-03

申请号：US10906008

申请日：2005-01-31

Applicant: Yu-Ren Wang ,  Ying-Wei Yen ,  Liyuan Cheng ,  Kuo-Tai Huang

Inventor： Yu-Ren Wang ,  Ying-Wei Yen ,  Liyuan Cheng ,  Kuo-Tai Huang

IPC: H01L21/00 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

Abstract: A method for forming a gate dielectric layer is described. A silicon oxide layer is formed on a semiconductor substrate. Then, a first and a second nitrogen doping processes are performed in sequence to the silicon oxide layer using plasma comprising inert gas and gaseous nitrogen to form a gate dielectric layer. The first nitrogen doping process is performed at a lower power, a lower pressure and a higher inert gas to nitrogen gas ratio than those at the second nitrogen doping process. The combination of the deeper nitrogen distribution of the first nitrogen doping process and the shallower nitrogen distribution of the second nitrogen doping process produces a flatter total nitrogen distribution profile so that leakage current from electron tunneling through the gate dielectric layer can be reduced.

Abstract translation: 描述了形成栅介质层的方法。 在半导体衬底上形成氧化硅层。 然后，使用包含惰性气体和气态氮的等离子体，依次对氧化硅层进行第一和第二氮掺杂工艺以形成栅极电介质层。 第一氮掺杂过程在低功率，低压和高惰性气体与氮气比之下进行，与第二氮掺杂过程相比。 第一氮掺杂过程的较深氮分布和第二氮掺杂过程的较浅氮分布的组合产生更平坦的总氮分布分布，从而可以减少来自电介质穿过栅介质层的漏电流。

公开(公告)号：US07214631B2

公开(公告)日：2007-05-08

申请号：US10906008

申请日：2005-01-31

Applicant: Yu-Ren Wang ,  Ying-Wei Yen ,  Liyuan Cheng ,  Kuo-Tai Huang

Inventor： Yu-Ren Wang ,  Ying-Wei Yen ,  Liyuan Cheng ,  Kuo-Tai Huang

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

Abstract: A method for forming a gate dielectric layer is described. A silicon oxide layer is formed on a semiconductor substrate. Then, a first and a second nitrogen doping processes are performed in sequence to the silicon oxide layer using plasma comprising inert gas and gaseous nitrogen to form a gate dielectric layer. The first nitrogen doping process is performed at a lower power, a lower pressure and a higher inert gas to nitrogen gas ratio than those at the second nitrogen doping process. The combination of the deeper nitrogen distribution of the first nitrogen doping process and the shallower nitrogen distribution of the second nitrogen doping process produces a flatter total nitrogen distribution profile so that leakage current from electron tunneling through the gate dielectric layer can be reduced.

Abstract translation: 描述了形成栅介质层的方法。 在半导体衬底上形成氧化硅层。 然后，使用包含惰性气体和气态氮的等离子体，依次对氧化硅层进行第一和第二氮掺杂工艺以形成栅极电介质层。 第一氮掺杂过程在低功率，低压和高惰性气体与氮气比之下进行，与第二氮掺杂过程相比。 第一氮掺杂过程的较深氮分布和第二氮掺杂过程的较浅氮分布的组合产生更平坦的总氮分布分布，从而可以减少来自电介质穿过栅介质层的漏电流。