公开(公告)号：US06468908B1

公开(公告)日：2002-10-22

申请号：US09900406

申请日：2001-07-09

Applicant: Cheng-Shien Chen ,  Li-Der Chen ,  Chih-Min Wen ,  Chung Liu ,  Chih-Ching Lin

Inventor： Cheng-Shien Chen ,  Li-Der Chen ,  Chih-Min Wen ,  Chung Liu ,  Chih-Ching Lin

IPC: H01L2144

CPC classification number: H01L21/2855 ,  H01L21/32051 ,  H01L21/76838

Abstract: This invention relates to a method of fabricating metal wiring, whereby sputtered metal is rapidly cooled down by a post-metal quenching process, to prevent deleterious CuAl2 precipitation. The main embodiments are the formation of a TiN reactively sputtered bottom barrier layer, followed by a sputtered Al—Cu alloy wiring layer immediately followed by an in situ post-metal quench (key step), then followed by a reactively sputtered second TiN top barrier layer. The “in situ” post-metal quench is especially effective by employing wafer backside cooling using low temperature helium gas or argon gas, cooling the substrate from a high temperature range of 450 to 150 °C., to a low temperature range near room temperature, in a short time interval of between 30 to 180 seconds. The CuAl2 precipitates if allowed to form, block the etch removal of the underlying TiN layer causing electrical shorts between closely spaced lines.

Abstract translation: 本发明涉及一种制造金属布线的方法，其中溅射金属通过金属后淬火工艺快速冷却，以防止有害的CuAl 2沉淀。 主要实施方案是形成TiN反应溅射的底部阻挡层，随后是溅射的Al-Cu合金布线层，紧接着是原位金属后淬火（关键步骤），然后是反应溅射的第二TiN顶部阻挡层 层。 通过使用低温氦气或氩气的晶片背面冷却，“原位”后金属淬火特别有效，将基板从450至150℃的高温范围内冷却至接近室温的低温范围 ，在30到180秒的短时间间隔内。 如果允许形成CuAl2则沉淀，阻止下面的TiN层的蚀刻去除，导致紧密间隔的线之间的电短路。