公开(公告)号：US07745272B2

公开(公告)日：2010-06-29

申请号：US12199378

申请日：2008-08-27

Applicant: Christian G. Van de Walle ,  Kiesel Peter ,  Oliver Schmidt

Inventor： Christian G. Van de Walle ,  Kiesel Peter ,  Oliver Schmidt

IPC: H01L21/338

CPC classification number: G01N27/414 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  H01L29/225

Abstract: A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.

Abstract translation: 半导体器件具有包括第一半导体氧化物材料层的异质结构。 半导体氧化物材料的第二层形成在第一半导体氧化物层上，使得二维电子气在第一和第二材料之间的界面积聚。 外表面上的钝化层使结构稳定。 该器件还具有源触点和漏极触点。