公开(公告)号：US08298957B2

公开(公告)日：2012-10-30

申请号：US12320903

申请日：2009-02-06

申请人： Yosuke Sakao ,  Kensuke Kamiutanai ,  Akitaka Shimizu

发明人： Yosuke Sakao ,  Kensuke Kamiutanai ,  Akitaka Shimizu

IPC分类号： H01L21/302

CPC分类号： H01L21/3065

摘要： The present invention is a plasma etching method comprising: a cleaning step (a) in which a cleaning gas is supplied into a processing vessel and the cleaning gas is made plasma, so that a deposit adhering to an inside of the processing vessel is removed by means of the plasma; a film depositing step (b), succeeding the cleaning step (a), in which a film depositing gas containing carbon and fluorine is supplied into the processing vessel and the film depositing gas is made plasma, so that a film containing carbon and fluorine is deposited on the inside of the processing vessel by means of the plasma; an etching step (c), succeeding the film depositing step (b), in which a substrate is placed on a stage inside the processing vessel, and an etching gas is supplied into the processing vessel and the etching gas is made plasma, so that the substrate is etched by means of the plasma; and an unloading step (d), succeeding the etching step (c), in which the substrate is unloaded from the processing vessel; wherein, after the unloading step (d) has been finished, the cleaning step (a) to the unloading step (d) are repeated again.

摘要翻译： 本发明是一种等离子体蚀刻方法，其特征在于，包括：清洗工序（a），其中清洗气体被供给到处理容器中，清洗气体被制成等离子体，使得附着在处理容器内部的沉积物被 等离子体的手段; 在清洗步骤（a）之后的成膜步骤（b）中，其中将含有碳和氟的气体的膜沉积到处理容器中并将成膜气体制成等离子体，使得含有碳和氟的膜为 通过等离子体沉积在处理容器的内部; 在薄膜沉积步骤（b）之后的蚀刻步骤（c）中，其中将基板放置在处理容器内的台上，并且将蚀刻气体供应到处理容器中，并使蚀刻气体被制成等离子体，使得 通过等离子体蚀刻衬底; 以及在蚀刻步骤（c）之后的卸载步骤（d），其中所述基板从所述处理容器卸载; 其中，在所述卸载步骤（d）已经完成之后，再次重新执行到所述卸载步骤（d）的清洁步骤（a）。