公开(公告)号：US20110195636A1

公开(公告)日：2011-08-11

申请号：US12703998

申请日：2010-02-11

申请人： Ji-Gang PAN

发明人： Ji-Gang PAN

IPC分类号： B24B51/00 ,  B24B49/00 ,  B24B49/06

CPC分类号： B24B37/005 ,  B24B37/042 ,  G05B2219/45232 ,  H01L22/26

摘要： A method for controlling polishing a wafer includes the following step. Firstly, a database storing a number of status data of a polished film of a wafer and a number of polishing parameters corresponding to the status data is established. Each of the polishing parameters includes a head sweep of a polishing head along a redial direction of a polishing platen. The head sweep refers to a movement distance range from a center of the polishing head to a center of the polishing platen during a polishing process. Subsequently, a first wafer having a predetermined status data is provided. Thereafter, the predetermined status data is compared with the status data in the database so as to find out the polishing parameter corresponding to the predetermined status data, thereby determining a first polishing parameter of the first wafer. Afterward, a first polishing process using the first polishing parameter is applied to the first wafer. The method can control the status of a polished film and optimize the polishing parameter.

摘要翻译： 控制抛光晶片的方法包括以下步骤。 首先，建立存储晶片的抛光膜的状态数据的数据和与状态数据对应的多个研磨参数的数据库。 每个抛光参数包括抛光头沿着抛光台板的重拨方向的头扫。 头部扫掠是指在抛光处理期间从抛光头的中心到研磨台板的中心的移动距离范围。 随后，提供具有预定状态数据的第一晶片。 此后，将预定状态数据与数据库中的状态数据进行比较，以找出与预定状态数据对应的抛光参数，由此确定第一晶片的第一抛光参数。 之后，使用第一抛光参数的第一抛光工艺被施加到第一晶片。 该方法可以控制抛光膜的状态并优化抛光参数。