摘要:
Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.
摘要翻译:形成半导体器件的电容器的方法可以包括在半导体衬底上形成电容器的下电极并形成Ba(Ti 1-x Sn Sn x x)的介电材料层 3)(3)(BTS)或Ba(Ti 1-x Zr x x)O 3(BTZ) 在下电极上。 可以在介电材料层上形成非晶层。 可以在非晶层上形成电容器的上电极。
摘要:
Provided with a phosphor for a fluorescent display that includes at least one divalent transition metal and at least two trivalent metal added to SrTiO3 and having a formula of: SrTi1−x−yMxNyO3:zPr3+ wherein M represents the divalent transition metal selected from the group consisting of Zn, Mn, Co, Ni, Cu and Cd, N represents the trivalent metal selected from the group consisting of Ga, Al, In and B, and 0≦x≦0.1, 0≦y≦0.1 and 0≦z≦0.1.
摘要翻译:提供一种用于荧光显示器的荧光体,其包括至少一种二价过渡金属和添加到SrTiO 3中的至少两种三价金属,并具有下式:其中M表示选自Zn,Mn,Co, Ni,Cu和Cd,N表示选自Ga,Al,In和B的三价金属,0表示0 <= x <= 0.1,0 <= y <= 0.1,0 <= z <= 0.1。
摘要:
Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.
摘要翻译:形成半导体器件的电容器的方法可以包括在半导体衬底上形成电容器的下电极并形成Ba(Ti 1-x Sn Sn x x)的介电材料层 3)(3)(BTS)或Ba(Ti 1-x Zr x x)O 3(BTZ) 在下电极上。 可以在介电材料层上形成非晶层。 可以在非晶层上形成电容器的上电极。
摘要:
The present invention provides a green phosphor for fluorescent display having a composition represented by a chemical formula: xZnO+(2-x-y/2)Ga2O3+yAl2O3:zMn2+ where 0.8≦x
摘要:
A dielectric ceramic composition having an empirical formula represented by (Sr.sub.l-2x Bi.sub.x Ti.sub.l-y W.sub.y)O.sub.3 wherein x is in a range of 0.0005 to 0.003 and y is in a range of 0.0015 to 0.009 for boundary layer condensers and a method for preparing the same which are comprising the steps of: mixing Bi.sub.2 O.sub.3 -WO.sub.3 frit powder with main component having an empirical formula represented by Sr.sub.l-2x Ti.sub.l-y O.sub.3 wherein x is in a range of 0.0005 to 0.003 and y is in a range of 0.0015 to 0.009, in a wet manner, the Bi.sub.2 O.sub.3 frit serving as a reducing agent; drying the resulting mixture; sintering the dried mixture at a temperature of 1,400 to 1,470.degree. C under a reducing atmosphere; and applying secondary thermal treatment to the sintered body at 1,250.degree. C are disclosed.