公开(公告)号：US07172725B2

公开(公告)日：2007-02-06

申请号：US10724381

申请日：2003-11-28

Applicant: Moon-Hee Hong ,  Ja-Ho Choi ,  Seoung Lee ,  Eun-Pyo Kim ,  Sung-Ho Lee ,  Joon-Woong Noh

Inventor： Moon-Hee Hong ,  Ja-Ho Choi ,  Seoung Lee ,  Eun-Pyo Kim ,  Sung-Ho Lee ,  Joon-Woong Noh

IPC: B22F3/26 ,  B22F3/16 ,  B22F1/02

CPC classification number: H01H1/025 ,  B22F3/26 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/045 ,  C22C27/04 ,  F42B1/032 ,  B22F1/0096 ,  B22F3/02 ,  B22F1/0003 ,  B22F9/22 ,  B22F9/04

Abstract: In W—Cu alloy having a homogeneous micro-structure and a fabrication method thereof, the method includes forming mixed powders by mixing tungsten powders with W—Cu composite powders; forming a compact by pressurizing-forming the mixed powders; forming a skeleton by sintering the compact; and contacting copper to the skeleton and performing infiltration. W—Cu alloy having a homogeneous structure fabricated by the present invention shows better performance by being used as a material for high voltage electric contact of a contact braker, a material for heat sink of an IC semiconductor and a shaped charge liner.

Abstract translation: 在具有均匀微结构的W-Cu合金及其制造方法中，该方法包括通过将钨粉与W-Cu复合粉末混合来形成混合粉末; 通过加压形成混合粉末形成压块; 通过烧结成型体形成骨架; 并使铜与骨架接触并进行渗透。 通过本发明制造的具有均匀结构的W-Cu合金通过用作接触式制动器的高压电接触材料，IC半导体的散热材料和成形电荷衬垫而显示出更好的性能。