公开(公告)号：US11342440B2

公开(公告)日：2022-05-24

申请号：US16518381

申请日：2019-07-22

申请人： Ishan Wathuthanthri ,  Ken Alfred Nagamatsu ,  William J. Sweet ,  James T. Kelliher ,  John S. Mason, Jr. ,  Jonah Paul Sengupta

发明人： Ishan Wathuthanthri ,  Ken Alfred Nagamatsu ,  William J. Sweet ,  James T. Kelliher ,  John S. Mason, Jr. ,  Jonah Paul Sengupta

IPC分类号： H01L29/778 ,  H01L29/15 ,  H01L29/66 ,  H01L21/56 ,  H01L23/31 ,  H01L29/06 ,  H01L21/02

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.

公开(公告)号：US20210028295A1

公开(公告)日：2021-01-28

申请号：US16518381

申请日：2019-07-22

申请人： ISHAN WATHUTHANTHRI ,  KEN ALFRED NAGAMATSU ,  WILLIAM J. SWEET ,  JAMES T. KELLIHER ,  JOHN S. MASON, JR. ,  JONAH PAUL SENGUPTA

发明人： ISHAN WATHUTHANTHRI ,  KEN ALFRED NAGAMATSU ,  WILLIAM J. SWEET ,  JAMES T. KELLIHER ,  JOHN S. MASON, JR. ,  JONAH PAUL SENGUPTA

IPC分类号： H01L29/66 ,  H01L21/56 ,  H01L23/31 ,  H01L29/15 ,  H01L29/06 ,  H01L29/778

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.